S5971_15 Datasheet, PDF (1/5 Pages) Hamamatsu Corporation – Si PIN photodiodes

Si PIN photodiodes
S5971
S5972
S5973 series
High-speed photodiodes
(S5973 series: 1 GHz)
The S5971, S5972 and S5973 series are high-speed Si PIN photodiodes designed for visible to near infrared light detec-
tion. These photodiodes provide wideband characteristics at a low bias, making them suitable for optical communications
and other high-speed photometry. The S5973 series includes a mini-lens type (S5973-01) that can be efficiently coupled
to an optical fiber and a violet sensitivity enhanced type (S5973-02) ideal for violet laser detection.
Features
High-speed response
S5971
: 100 MHz (VR=10 V)
S5972
: 500 MHz (VR=10 V)
S5973 series: 1 GHz (VR=3.3 V)
Low price
High sensitivity
S5973-02: 0.3 A/W, QE=91 % (λ=410 nm)
High reliability
Applications
Optical fiber communications
High-speed photometry
Violet laser detection (S5973-02)
Structure / Absolute maximum ratings
Type no.
S5971
S5972
S5973
S5973-01
S5973-02
Dimensional
outline/
Window
material*¹
(1)/K
(2)/L
(3)/K
Package
(mm)
TO-18
Photosensitive
area size
Effective
photosensitive
area
(mm)
φ1.2
φ0.8
(mm²)
1.1
0.5
φ0.4
0.12
Reverse
voltage
VR Max.
(V)
Absolute maximum ratings
Power Operating Storage
dissipation temperature temperature
P
Topr
Tstg
(mW)
(°C)
(°C)
20
50
-40 to +100 -55 to +125
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics
Type no.
S5971
S5972
S5973
S5973-01
S5973-02
Spectral ^Peak
response sensitivity
range wavelength
λ
λp
Photosensitivity
S
(A/W)
λp
(nm) (nm)
660 780 830
nm nm nm
320 to 1060 900 0.64
0.6
800 0.57 _0.44 ^0.55 0.55
320 to 1000 ₇₆₀ 0.52
0.51 0.47
0.45 0.3*² 0.42 0.37
Short
circuit
current
Isc
100 lx
(μA)
1.0
0.42
0.09
0.42
0.07
Dark
current
ID
Typ.
(nA)
0.07*³
0.01*³
Max.
(nA)
1*³
0.5*³
0.001*⁴ 0.1*⁴
*1: Window material K: borosilicate glass, L: lens type borosilicate glass
*2: λ=410 nm
*3: VR=10 V
*4: VR=3.3 V
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Temp.
coefficient
of
ID
TCID
Cutoff
frequency
fc
Terminal
capacitance
Ct
f=1 MHz
Noise
equivalent power
NEP
VR=10 V
λ=λp
(times/°C)
1.15
(GHz)
0.1*³
0.5*³
1*⁴
(pF)
3*³
1.6*⁴
(W/Hz^1/2)
7.4 × 10^-15
3.1 × 10^-15
1.1 × 10^-15 *⁴
1.9 × 10^-15 *² *⁴
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