S5668-11 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si photodiode High sensitivity X-ray detectors

PHOTODIODE
Si photodiode
S5668-11/-34
High sensitivity X-ray detectors
Features
l 16-element photodiode array with scintillator
S5668-11: CsI
S5668-34: ceramic scintillator
l High sensitivity compared with CWO
S5668-11: 3.2 times
S5668-34: 1.8 times
l S5668-34: high reliability
less afterglow, low cross-talk, low capacitance
Applications
l X-ray fluorescence analysis
l X-ray detection
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR Max.
10
V
Operating temperature
Topr
-10 to +60
°C
Storage temperature
Tstg
-20 to +70
°C
s Photodiode electrical and optical characteristics (Ta=25 °C, per element)
Parameter
Symbol
Condition
S5668-11
Typ.
Max.
S5668-34
Typ.
Max.
Unit
Spectral response range
λ
320 to 1100
-
320 to 1000
-
nm
Peak sensitivity wavelength
λp
960
-
800
-
nm
Photo sensitivity
S
λ=540 nm
λ=λp
0.31
-
0.38
-
A/W
0.56
-
0.54
-
A/W
X-ray sensitivity
Sx
X-ray tube voltage=
120 kV *
5.8
-
2.5
-
nA
Dark current
ID VR=10 mV
1
10
1
30
pA
Terminal capacitance
Ct VR=0 V, f=10 kHz
300
550
35
70
pF
* Tube current=1.0 mA, aluminum filter: t=6 mm, distance=830 mm
Note) Sensitivity values are just for your reference. Actual sensitivity values may vary depending on an equipment type and
measurement conditions.
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