S5377 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Large area Si PIN photodiode for direct detection

PHOTODIODE
Si PIN photodiode
S5377/S4276 series
Large area Si PIN photodiode for direct detection
S5377/S4276 series are large-area photodiodes specifically designed for the direct detection of high-energy charged particles and X-rays.
These detectors are mounted on PC boards with openings for the purpose of ∆E detection of charged particles. Other Si detectors and PSDs with
different configurations, thicknesses and surface areas are also available upon request.
Features
l Large area
l Low dark current
l Excellent about bias voltage tolerance
Applications
l Heavy ions energy detection
l X-ray detection
l ∆E/E detection
s Specifications / Absolute maximum ratings
Type No.
Active area
Chip
thickness
(mm)
(µm)
Uniform
thickness
(µm)
Surface
orientation
Dead layer
thickness *¹
Front Rear
side side
(µm) (µm)
S5377-04
325 ± 15
20
S5377-05
S5377-02
S5377-03
28 × 28 ^{280 ± 15}
4.0
500 ± 15
450 ± 15
(111)
2
1.5
20
2
S4276-02
S4276-03
48 × 48
325 ± 15
280 ± 15
5.0
20
2
*1: Estimated value
*2: No condensation
Absolute maximum ratings
Reverse
voltage
VR
Operating Storage
Current temperature *² temperature *²
Topr
Tstg
(V)
(mA)
(°C)
(°C)
120
200
2
0 to +60 0 to +80
120
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Full depletion voltage
VD
Max.
(V)
Dark current
ID
Typ.
Max.
(nA)
(nA)
Rise time *³
tr
(ns)
Terminal capacitance
Ct
VR = VD
f=100 kHz
(pF)
S5377-04
S5377-05
100
10
50
60
300
70
300
320
S5377-02
S5377-03
170
30
150
200
1000
40
190
200
S4276-02
S4276-03
100
20
100
200
1000
100
860
900
*3: Rise time is the time required for transition from 10 % to 90 % of the peak output value. The light source is a dalta function
pulse of a laser diode (800 nm) and the load resistance is 50  Ω.