S5106_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si PIN photodiode

PHOTODIODE
Si PIN photodiode
S5106, S5107, S7509, S7510
Chip carrier package for surface mount
S5106, S5107, S7509 and S7510 are Si PIN photodiodes sealed in chip carrier packages suitable for surface mount using automated solder
reflow techniques. These photodiodes have large active areas, making them suitable for spatial light transmission where a wide field-of-view
angle is required. Other applications include POS scanners, power meters and analytical instruments.
Features
l Active area
S5106: 5 × 5 mm
S5107: 10 × 10 mm
S7509: 2 × 10 mm
S7510: 6 × 11 mm
l Ceramic chip carrier package for surface mount
l Suitable for solder reflow
l High sensitivity
Applications
l Spatial light transmission
l Laser radar
l Power meter
l Bar-code reader
s General ratings / Absolute maximum ratings
Type No.
S5106
S5107
S7509
S7510
Dimensional
outline/
Window
material *
➀/R
➁/R
➂/R
➃/R
Active
area size
(mm)
5×5
10 × 10
2 × 10
6 × 11
Effective
active area
(mm²)
25
100
20
66
Reverse
voltage
VR Max
(V)
Absolute maximum ratings
Power
Operating
dissipation temperature
P
Topr
(mW)
(°C)
Storage
temperature
Tstg
(°C)
30
50
-40 to +100 -40 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Spectral Peak
response ^sensitivity
range ^wavelength
λ
λp
Photo sensitivity
S
(A/W)
λp ^{660 nm 780 nm 830 nm}
Short
circuit
current
Isc
100 lx
Dark
current
ID
VR=10 V
Temp.
coefficient
of ID
TCID
Cut-off
frequency
fc
RL=50 Ω
VR=10 V
Terminal
capacitance
Ct
f=1 MHz
VR=10 V
Typ. Max.
(nm) (nm)
(µA) (nA) (nA) (times/°C) (MHz) (pF)
S5106
27 0.4 5
20
40
S5107
S7509
320 to 1100 _{960 0.72 0.45 0.57 0.62}
110
22
0.9 10
0.5 5
1.15
10
20
150
40
S7510
72 1.0 10
15
80
* Window R: Resin coating
NEP
VR=10 V
λ=λp
(W/Hz^1/2)
1.6 × 10^-14
2.4 × 10^-14
1.7 × 10^-14
2.5 × 10^-14
Note) S5106, S7509: For mass production, order unit is 100 pieces.
S5107, S7510: For mass production, order unit is 50 pieces.
1