S4402 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si APD φ1 mm quadrant APD

PHOTODIODE
Si APD
S4402
φ1 mm quadrant APD
Features
l Uniform element characteristics
Quadrant format on one chip with φ1 mm active area
ensures uniform characteristics between elements.
l Single power supply operation
Allows easy and simple operation.
Applications
l Low-light-level detection
l Laser beam positioning
s General ratings
Parameter
Window material
Active area size
Effective active area
Symbol
-
A
-
s Absolute maximum ratings
Parameter
Operating temperature
Storage temperature
Symbol
Topr
Tstg
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
λ
Peak sensitivity wavelength
λp M=100
Photo sensitivity
S
λ=800 nm, M=1
Quantum efficiency
QE λ=800 nm, M=1
Breakdown voltage
VBR IR=100 µA
Temperature coefficient of VBR
-
Dark current
ID M=100
Cut-off frequency
fc
M=100, λ=800 nm
RL=50 Ω, -3 dB
Terminal capacitance
Ct M=100, f=1 MHz
Excess noise figure
x
M=50, f=10 kHz
Io=10 nA
Value
Borosilicate glass
φ1 mm/4
0.17 (per 1 element)
Value
-20 to +60
-55 to +100
Min.
Typ.
-
400 to 1000
-
800
-
0.5
-
75
-
150
0.65
-
0.4
-
310
-
8
-
0.35
Max.
-
-
-
-
200
-
2.0
-
-
-
Unit
-
mm
mm²
Unit
°C
°C
Unit
nm
nm
A/W
%
V
V/°C
nA
MHz
pF
-
1