S4349_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si photodiode

Si photodiode
S4349
Quadrant Si PIN photodiode
The S4349 is a quadrant Si PIN photodiode having sensitivity in the UV to near IR spectral range. A quadrant element format
allows position sensing such as for laser beam axis alignment.
Features
Quadrant (2 × 2) element format
Low crosstalk: 2% max.
Wide spectral response range: 190 to 1000 nm
High-speed response: fc=20 MHz
TO-5 metal package
Applications
Laser beam axis alignment
Position sensing
Structure
Parameter
Symbol
Value
Unit
Window material
-
Quartz glass
-
Photosensitive area
A
†3.0/4 elements
mm
Element gap
-
100
μm
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
VR max
20
V
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-55 to +80
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C, per 1 element)
Parameter
Spectral response range
Peak sensitivity wavelength
Photosensitivity
Dark current
Temperature coefficient of ID
Cutoff frequency
Terminal capacitance
Noise equivalent power
Crosstalk
Symbol
λ
λp
S
ID
TCID
fc
Ct
NEP
CL
Condition
λ=λp
VR=5 V
VR=5 V, RL=50 Ω
λ=780 nm, -3 dB
VR=5 V, f=1 MHz
VR=5 V, λ=λp
VR=5 V, λ=780 nm
Typ.
190 to 1000
720
0.45
0.01
1.12
20
25
4.0 × 10^-15
-
Max.
-
-
-
0.2
-
-
-
-
2
Unit
nm
nm
A/W
nA
times/°C
MHz
pF
W/Hz^1/2
%
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