S4315-01 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Low bias operation, for 800 nm band

PHOTODIODE
Si APD
S2381 to S2385, S5139, S8611, S3884, S4315 series
Low bias operation, for 800 nm band
Features
l Stable operation at low bias
l High-speed response
l High sensitivity and low noise
Applications
l Spatial light transmission
l Rangefinder
s General ratings / Absolute maximum ratings
Type No.
S2381
S2382
S5139
S8611
S2383
S2383-10 *³
S3884
S2384
S2385
Dimensional
outline/
W indow
material *¹
➀/K
➁/L
➂/L
➀/K
➃/K
➄/K
➅/K
Package
TO-18
TO-5
TO-8
Active area *²
size
(mm)
φ0.2
φ0.5
φ1.0
φ1.5
φ3.0
φ5.0
Effective active
area
(mm²)
0.03
0.19
0.78
1.77
7.0
19.6
Absolute maximum ratings
Operating
Storage
temperature
temperature
Topr
Tstg
(°C)
(°C)
-20 to +85
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Spectral
response
range
λ
Peak *⁴
sensitivity
wavelength
λp
Photo
sensitivity
S
M=1
λ=800 nm
Quantum
efficiency
QE
M=1
λ=800 nm
Breakdown
voltage
VBR
ID=100 µA
Temp.
coefficient
of
VBR
Dark
current *⁴
ID
Cut-off *⁴
frequency
fc
RL=50 Ω
Terminal *⁴
capacitance
Ct
Excess
Noise
figure *⁴
x
λ=800 nm
Gain
M
λ=800 nm
Typ. Max.
Typ. Max.
(nm)
(nm)
(A/W )
(%) (V) (V) (V/°C) (nA) (nA) (MHz) (pF)
S2381
0.05 0.5 1000
1.5
S2382
S5139
0.1 1 900
3
S8611
100
S2383
400 to 1000 800
0.5
S2383-10 *³
75
150 200 0.65 _{0.2 2}
600
6
0.3
S3884
0.5 5 400
10
S2384
1 10 120
40
60
S2385
3 30 40
95
40
*1: Window material K: borosilicate glass, L: lens type borosilicate glass
*2: Active area in which a typical gain can be obtained
*3: This is a variant of S2383 in which the device chip is light-shielded by aluminum coating except for the active area
*4: Measured under conditions that the device is operated at the gain listed in the specification table
Note) The following different breakdown voltage ranges are available.
S2381, S2382, S5139, S8611, S3884: -01 (80 to 120 V), -02 (120 to 160 V), -03 (160 to 200 V)
S2381-10: -10A (80 to 120 V), -10B (120 to 160 V), -10C (160 to 200 V)
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