S4111_15 Datasheet, PDF (1/6 Pages) Hamamatsu Corporation – Si photodiode arrays

Si photodiode arrays
S4111/S4114 series
16, 35, 46 element Si photodiode array for UV
to NIR
The S4111/S4114 series are Si photodiode linear array mounted in ceramic DIPs (Dual Inline Packages). These photodiode ar-
rays are primarily developed for low-light-level detection such as spectrophotometry, and cover a wide spectral range from UV
to near infrared light. Since all elements can be used with a reverse bias for charge storage readout, the S4111/S4114 series
are able to detect low level light with high sensitivity. Crosstalk between elements is minimized to maintain signal purity. Spe-
cial filters can be attached as the input window (custom order products).
Features
Large photosensitive area
Low crosstalk
S4111 series: Enhanced infrared sensitivity,
low dark current
S4114 series: IR sensitivity suppressed type,
low terminal capacitance,
high-speed response
Applications
Multichannel spectrophotometers
Color analyzers
Light spectrum analyzers
Light position detection
Structure / Absolute maximum ratings
Type no.
Window
material
Package
(mm)
Photosensitive Between Between
area
elements elements Number
(per 1 element) measure pitch of
Size Effective area
elements
(mm) (mm²) (mm) (mm)
Absolute maximum ratings
Reverse Operating Storage
voltage temperature temperature
VR max
Topr
Tstg
(V)
(°C)
(°C)
S4111-16R
S4111-16Q*
S4111-35Q*
S4111-46Q*
S4114-35Q*
S4114-46Q*
Resin potting
Quartz
18 pin DIP 1.45 × 0.9 1.305
16
40 pin DIP
48 pin DIP
40 pin DIP
4.4 × 0.9
3.96
0.1
1.0
35
46
35
48 pin DIP
46
15
-20 to +60 -20 to +80
* Refer to “Precautions against UV light exposure.”
Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings
is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute
maximum ratings.
Electrical and optical characteristics (Typ. Ta=25 °C, per 1 element, unless otherwise noted)
Type no.
S4111-16R
S4111-16Q
S4111-35Q
S4111-46Q
S4114-35Q
S4114-46Q
Spectral Peak
response sensitivity
range wavelength
λ
λp
(nm) (nm)
340 to 1100
190 to 1100 ⁹⁶⁰
190 to 1000 800
Photosensitivity
S
Dark
current
ID
Max.
λp 200 nm 633 nm VR=10 mV VR=10 V
(A/W) (A/W) (A/W) (pA) (pA)
-
0.39
5
25
0.58 ^{0.08 0.43}
10 50
0.08 0.43
0.50
60 300
Shunt
resistance
Rsh
VR=10 mV
Min Typ.
(GΩ) (GΩ)
2.0 250
1.0 30
0.15 2
Terminal
capacitance
Ct
Rise time
tr
RL=1 kΩ
λ=655 nm
NEP
λ=λp
VR=0 V VR=10 V VR=0 V VR=10 V VR=0 V VR=10 V
(pF) (pF) (μs) (μs) (W/Hz^1/2) (W/Hz^1/2)
200 50 0.5 0.1 4.4 × 10^-16 1.7 × 10^-15
550 120 1.2 0.3 1.3 × 10^-15 3.1 × 10^-15
35 20 0.1 0.05 5.7 × 10^-15 8.0 × 10^-15
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