S3954 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – 76-element Si photodiode array High UV sensitivity photodiode array mounted in DIP

PHOTODIODE
76-element Si photodiode array
S3954
High UV sensitivity photodiode array mounted in DIP
Features
l High UV sensitivity: QE 75 % (λ=200 nm)
l Half pitch 78-lead DIP
l Element size: 3.175 × 0.3175 mm
l Entire active area: 3.175 × 25.6875 mm
l Element pitch: 0.3425 mm
Applications
l Spectrophotometers
s Absolute maximum ratings
Parameter
Symbol
Reverse voltage
VR Max.
Operating temperature
Topr
Storage temperature
Tstg
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
λ
Peak sensitivity wavelength
λp
λ=200 nm
Photo sensitivity
S λ=633 nm
λ=λp
Dark current
Temperature coefficient of
dark current
ID
TCID
per 1 element
VR=10 mV
Rise time
Terminal capacitance
tr
VR=0 V, RL=1 kΩ
λ=655 nm
Ct
per 1 element
VR=0 V, f=10 kHz
Noise equivalent power
NEP VR=0 V, λ=λp
Value
5
-20 to +60
-20 to +80
Min.
Typ.
-
190 to 1100
-
960
-
0.10
-
0.43
-
0.58
-
0.1
-
1.12
-
0.4
-
150
-
7.0 × 10^-16
Max.
-
-
-
-
-
30
-
-
-
-
Unit
V
°C
°C
Unit
nm
nm
A/W
pA
times/°C
µs
pF
W/Hz^1/2
1