S3922_15 Datasheet, PDF (1/7 Pages) Hamamatsu Corporation – NMOS linear image sensor

IMAGE SENSOR
NMOS linear image sensor
S3922/S3923 series
Voltage output type with current-integration readout circuit and impedance conversion circuit
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active
area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. NMOS linear image sensors also offer excellent output
linearity and wide dynamic range.
S3922/S3923 series have a current-integration readout circuit utilizing the video line and an impedance conversion circuit. The output is available
in boxcar waveform allowing signal readout with a simple external circuit.
The photodiodes of S3922 series have a height of 0.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S3923 series also
have a height of 0.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 3 different pixel quantities for each series, 128
(S3922-128Q), 256 (S3922-256Q, S3923-256Q) and 512 (S3922-512Q, S3923-512Q) and 1024 (S3923-1024Q). Quartz glass is the standard
window material.
Features
Applications
Built-in current-integration readout circuit utilizing
Multichannel spectrophotometry
video line capacitance and impedance conversion
circuit (boxcar waveform output)
Image readout system
Wide active area
Pixel pitch: 50 µm (S3922 series)
25 µm (S3923 series)
Pixel height: 0.5 mm
High UV sensitivity with good stability
Low dark current and high saturation charge allow a long
integration time and a wide dynamic range at room temperature
Excellent output linearity and sensitivity spatial uniformity
Low voltage, single power supply operation
Start pulse, clock pulse and video line reset pulse are
CMOS logic compatible
■ Equivalent circuit
■ Active area structure
Start st
Clock 1
Clock 2
Address
switch
Active
photodiode
Saturation
control gate
Saturation
control drain
Address
switch
Dummy diode
Digital shift register
(MOS shift register)
End of scan
Source follower circuit
Vdd
Active video
Vss
Dummy video
Reset switch
Reset
Reset V
KMPDC0019EA
b
a
Oxidation silicon
N type silicon
P type silicon
■ Absolute maximum ratings
Parameter
Symbol
Supply voltage
Vdd
Input pulse (φ1, φ2, φst, Reset φ) voltage Vφ
Power consumption*¹
P
Operating temperature*²
Topr
Storage temperature
Tstg
*1: Vdd=5 V, Vr=2.5 V
*2: No condensation
S3922 series: a=50 µm, b=45 µm
S3923 series: a=25 µm, b=20 µm
Value
15
15
10
-40 to +65
-40 to +85
KMPDA0111EA
Unit
V
V
mW
°C
°C
1