S3904-F Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – NMOS linear image sensor

IMAGE SENSOR
NMOS linear image sensor
S3901/S3904-F series
NMOS linear image sensors with fiber optic windows
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, operates at low power consumption and is easy to handle. Each photodiode has a large active
area, high sensitivity yet very low noise, delivering a high S/N even at low light levels.
S3901/S3904-F series are current-output type NMOS linear image sensors with fiber optic windows and feature superior output linearity and wide
dynamic range. The fiber optic windows allow efficient optical coupling to an image device such as image intensifiers suitable for low-light-level
detection.
The photodiodes of S3901-F series have a height of 2.5 mm and are arrayed in a row at a spacing of 50 µm. The photodiodes of S3904-F series
also have a height of 2.5 mm but are arrayed at a spacing of 25 µm. The photodiodes are available in 2 different pixel quantities for each series:
256 (S3901-256F), 512 (S3901-512F, S3904-512F), 1024 (S3904-1024F).
Hamamatsu also provides S3902/S3903-F series having a pixel height of 0.5 mm.
Features
Applications
l Wide active area
Pixel pitch: 50 µm (S3901-F series)
l Multichannel spectrophotometry
l Image readout system
25 µm (S3904-F series)
Pixel height: 2.5 mm
l Low dark current and high saturation charge allow a long
integration time and a wide dynamic range at room temperature
l Excellent output linearity and sensitivity spatial uniformity
l Lower power consumption: 1 mW Max.
l Start pulse and clock pulses are CMOS logic compatible
s Equivalent circuit
START st
CLOCK 1
CLOCK 2
ACTIVE
PHOTODIODE
DIGITAL SHIFT REGISTER
(MOS SHIFT REGISTER)
SATURATION
CONTROL GATE
SATURATION
CONTROL DRAIN
DUMMY DIODE
END OF SCAN
ACTIVE VIDEO
Vss
DUMMY VIDEO
KMPDC0020EA
s Absolute maximum ratings
Parameter
Input pulse (φ1, φ2, φst) voltage
Power consumption *¹
Operating temperature *²
Storage temperature
*1: Vφ=5.0 V
*2: No condensation
Symbol
Vφ
P
Topr
Tstg
s Active area structure
b
a
OXIDATION SILICON
FIBER OPTIC PLATE
N TYPE SILICON
P TYPE SILICON
S3901-F SERIES: a=50 µm, b=45 µm
S3904-F SERIES: a=25 µm, b=20 µm
Value
15
1
-40 to +65
-40 to +85
KMPDA0131EA
Unit
V
mW
°C
°C