S3901-FX Datasheet, PDF (1/3 Pages) Hamamatsu Corporation – NMOS linear image sensor

IMAGE SENSOR
NMOS linear image sensor
S3901-FX series
Image sensor highly sensitive to X-rays from 10 k to 100 keV
NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area,
high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type NMOS linear image sensors also offer
excellent output linearity and wide dynamic range.
S3901-FX series image sensors are variants of S3901-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the
light input window, the S3901-FX series was developed for detection of X-rays and electrons. The S3901-FX offers particularly high sensitivity to
X-rays from 10 k to 100 keV. The phosphor material used is gadolinium ox sulfide (Gd2O2S ·Tb) whose composition is carefully selected to
provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength.
The S3901-FX series active area consists of a photodiode array with pixels formed at 50 µm pitches and a height of 2.5 mm. The number of pixels
can be selected from 256 or 512.
Hamamatsu S3902/S3903/S3904 series NMOS linear image sensors are also available with FOP windows coated with the same phosphor
material as S3901-FX series.
Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 10 keV.
Features
l Wide active area
Pixel pitch: 50 µm
Pixel height: 2.5 mm
l Low dark current and high saturation charge allow a
long integration time and a wide dynamic range at room
temperature
l Excellent output linearity and sensitivity spatial uniformity
l Low power consumption: 1 mW Max.
l Start pulse and clock pulse are CMOS logic compatible
Figure 1 Equivalent circuit
Applications
l Test equipment using X-ray and electron beam transmission
l X-ray non-destructive inspection
l X-ray and electron beam detector
Figure 2 Active area structure
START st
CLOCK 1
CLOCK 2
ACTIVE
PHOTODIODE
DIGITAL SHIFT REGISTER
(MOS SHIFT REGISTER)
END OF SCAN
ACTIVE VIDEO
SATURATION
CONTROL GATE
SATURATION
CONTROL DRAIN
DUMMY DIODE
Vss
DUMMY VIDEO
KMPDC0020EA
s Absolute maximum ratings
Parameter
Input pulse (φ1, φ2, φst) voltage
Power consumption *¹
Operating temperature *²
Storage temperature
*1: Vφ=5.0 V
*2: No condensation
Symbol
Vφ
P
Topr
Tstg
PHOSPHOR MATERIAL
OXIDATION SILICON
Value
15
1
-30 to +60
-40 to +80
45 µm
50 µm
FIBER OPTIC PLATE
N TYPE SILICON
P TYPE SILICON
KMPDC0008EA
Unit
V
mW
°C
°C