S3590-18 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si PIN photodiode Large area Si PIN photodiode for scintillation counting

PHOTODIODE
Si PIN photodiode
S3590-18/-19
Large area Si PIN photodiode for scintillation counting
Features
Applications
l l Suitable for coupling with blue scintillator (LSO, GSO, etc.) Radiation detection (PET, etc.)
l Internal quantum efficiency: 100 % (λ=420 nm)
l X-ray detection
l S3590-19: bare chip type (without window)
s Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
VR
100
V
Power dissipation
P
100
mW
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-20 to +80
°C
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Short circuit current
Dark current
Temperature coefficient of I,
Cut-off frequency
Terminal capacitance
Noise equivalent power
λ
λp
S
Isc
ID
TCID
fc
Ct
NEP
λ=λp
λ=420 nm (LSO)
λ=480 nm (BGO)
λ=540 nm (CsI)
100 lx
VR=70 V
VR=70 V, -3 dB
RL=50 Ω
VR=70 V, f=1 MHz
S3590-18
Min. Typ. Max.
-
320 to
1100
-
-
960
-
-
0.65
-
-
0.28
-
-
0.34
-
-
0.38
-
-
100
-
-
4
10
-
1.12
-
-
40
-
-
40
-
-
7.6 × 10^-14
-
S3590-19
Min. Typ. Max.
-
320 to
1100
-
-
960
-
-
0.58
-
-
0.33
-
-
0.37
-
-
0.4
-
-
86
-
-
4
10
-
1.12
-
-
40
-
-
40
-
-
7.6 × 10^-14
-
Unit
nm
nm
A/W
A/W
A/W
A/W
µA
nA
times/°C
MHz
pF
W/Hz^1/2