S3590-08 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si PIN photodiode Large area sensors for scintillation detection

PHOTODIODE
Si PIN photodiode
S3590-08/-09
Large area sensors for scintillation detection
Features
Applications
l l Higher sensitivity and low dark current than conventional type Scintillation detectors
l Sensitivity matching with BGO and CsI (TI) scintillators
l Calorimeters
l High quantum efficiency: QE=85 % (λ=540 nm)
l Hodoscopes
l Low capacitance
l TOF counters
l High-speed response
l Air shower counters
l High stability
l Particle detectors, etc.
l Good energy resolution
s General ratings / Absolute maximum ratings
Type No.
Window
material
Active area
Depletion
layer
thickness
S3590-08
S3590-09
Epoxy resin
Window-less
(mm)
10 × 10
(mm)
0.3
Reverse
voltage
VR Max.
100
Absolute maximum ratings
Power
Operating
dissipation temperature
P
Topr
(mW)
(°C)
100
-20 to +60
Storage
temperature
Tstg
(°C)
-20 to +80
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Spectral Peak
response sensitivity
Photo sensitivity
S
S h ort Dark
circuit current Temp.
Term inal
cu rre n t ID coefficient C ut-off capacitance NEP
Type No.
range wavelength
Isc
of ID F reque nc y Ct VR=70 V
λ
λp λ=λp LSO BGO CsI(Tl) 100 lx Typ. Max. TCID
fc f= 1MHz
(nm)
420 nm 480 nm 540 nm
(nm) (A/W) (A/W) (A/W) (A/W) (µA) (nA) (nA) (tim es/°C ) (MHz)
(pF) (W/Hz^1/2)
S3590-08
S3590-09
320 to
1100
960 ^{0.66 0.20 0.30 0.36} 100 2 * 6 * 1.12
0.66 0.22 0.33 0.41
40 *
40 * 3.8 × 10 ^-14
* VR=70 V
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