S3071 Datasheet, PDF (1/3 Pages) Hamamatsu Corporation – Si PIN photodiode Large area, high-speed Si PIN photodiodes

PHOTODIODE
Si PIN photodiode
S3071, S3072, S3399, S3883
Large area, high-speed Si PIN photodiodes
S3071, S3072, S3399 and S3883 are Si PIN photodiodes having a relatively large active area from φ1.5 to φ5.0 mm yet they offer excellent
frequency response from 40 to 300 MHz. These photodiodes are suitable for spatial light transmission and high-speed pulsed light detection.
Features
l Active area size
S3071: φ5.0 mm
S3072: φ3.0 mm
S3399: φ3.0 mm
S3883: φ1.5 mm
l Cut-off frequency
S3071: 40 MHz (VR=24 V)
S3072: 45 MHz (VR=24 V)
S3399: 100 MHz (VR=10 V)
S3883: 300 MHz (VR=20 V)
l High reliability: TO-5/8 metal package
Applications
l Spatial light transmission
l High-speed pulsed light detection
s General ratings / Absolute maximum ratings
Type No.
S3071
S3072
S3399
S3883
Dimensional
outline/
Window
material *¹
➀/K
➁/K
➂/K
➃/K
Package
(mm)
TO-8
TO-5
Active
area size
(mm)
φ5.0
φ3.0
φ3.0
φ1.5
Effective
active area
(mm²)
19.6
7.0
7.0
1.7
Absolute maximum ratings
Reverse Power Operating Storage
voltage dissipation temperature temperature
VR Max.
P
Topr
Tstg
(V)
(mW)
(°C)
(°C)
50
50 -40 to +100 -55 to +125
30
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
S3071
S3072
S3399
S3883
Spectral Peak
response ^sensitivity
range ^wavelength
λ
λp
(nm) (nm)
320 to 1060 ₉₂₀
320 to 1000 ₈₄₀
Photo sensitivity
S
(A/W)
λp ^{660 nm 780 nm 830 nm}
0.6 0.47 0.54 0.56
0.6 0.45 0.58 0.6
Short
circuit
current
Isc
100 lx
(µA)
17
6.5
5.6
1.4
Dark
current
ID
(nA)
Temp. Cut-off Terminal
coefficient frequency _capacitance
of ID
fc
Ct
TCID RL=50 Ω f=1 MHz
Typ. Max. ^{(tim es/° C)}
0.5*³ 10 *³
0.3*³ 10 *³
1.15
0.1*⁴ 1.0 *⁴
0.05*² _{1.0 *}²
1.12
(MHz)
40 *³
45 *³
100 *⁴
300 *²
(pF)
18 *³
7 *³
20 *⁴
6 *²
NEP
λ=λp
(W/Hz^1/2)
2.1 × 10^-14 *³
1.6 × 10^-14 *³
9.4 × 10^-15 *⁴
6.7 × 10^-15 *²
*1: Window material K: borosilicate glass
*2: VR=20 V
*3: VR=24 V
*4: VR=10 V
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