S2829_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Phototransistor

Phototransistor
S2829
Subminiature package phototransistor
The S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package.
Features
Application
Subminiature plastic package with lens
Visible-cut package
High sensitivity: 1.8 mA (1000 lx)
Rotary encoders
Touch screen
Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Condition
Value
Unit
Collector-emitter voltage
VCEO
35
V
Emitter-collector voltage
VECO
4
V
Collector current
Ic
20
mA
Collector dissipation
Pc
80
mW
Operating temperature
Topr
No dew condition*¹
-25 to +85
°C
Storage temperature
Tstg
No dew condition*¹
-40 to +100
°C
Soldering
-
260 °C, 3 s, at least 2.5 mm away from package surface
-
*1: When there is a temperature difference between a product and the surrounding area in high humidity environment, dew
condensation may occur on the product surface. Dew condensation on the product may cause deterioration in characteristics and
reliability.
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Photocurrent*²
Ic
VCE=5 V, 1000 lx
0.3
1.8
-
mA
Dark current
ICEO
VCE=20 V, 0 lx
-
-
100
nA
Collector-emitter saturation voltage VCE(sat) Ic=0.3 mA, 1000 lx
-
-
0.4
V
Peak sensitivity wavelength
λp
-
800
-
nm
Rise time
Fall time
tr
Vcc=5 V, Ic=1 mA
-
2
-
μs
tf
RL=100 Ω
-
3
-
μs
*2: Measured with a CIE standard “A” light source at 2856 K
Response time measurement circuit
IF
Pulse input
Vcc
IF
90%
VO
10%
VO
tr
tf
RL
KPTRC0001EA
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