S2829 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Phototransistor Subminiature package phototransistor

PHOTOTRANSISTOR
Phototransistor
S2829
Subminiature package phototransistor
S2829 is a high sensitivity phototransistor molded into a visible-cut plastic package.
Features
l Subminiature plastic package with lens
l Visible-cut package
l High sensitivity: 1.0 mA (1000 lx)
Applications
l Tape start/end mark sensor for VTRs, cassette tape
recorders, etc.
l Rotary encoders
l Touch screen
s Absolute maximum ratings (Ta=25 °C)
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCEO
35
V
Emitter-collector voltage
VECO
4
V
Collector current
Ic
20
mA
Collector dissipation
Pc
80
mW
Operating temperature
Topr
-25 to +85
°C
Storage temperature
Tstg
-40 to +100
°C
Soldering
-
260 °C, 3 s, at least 2.5 mm away from package surface
-
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Photocurrent *
Ic VCE=5 V, 1000 lx
Dark current
ICEO VCE=20 V, 0 lx
Collector-emitter saturation voltage
VCE (sat) Ic=0.3 mA, 1000 lx
Peak sensitivity wavelength
λp
Rise time
tr Vcc=5 V, Ic=1 mA
Fall time
tf RL=100 Ω
* Measured with a CIE standard “A” light source at 2856 K
Min.
Typ.
Max.
Unit
0.3
1.0
-
mA
-
-
100
nA
-
-
0.4
V
-
850
-
nm
-
2
-
µs
-
3
-
µs
s Response time measurement circuit
IF
PULSE INPUT
RL
Vcc
IF
VO
VO
tr
90 %
10 %
tf
KPTRC0001EA