S2592 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR

PHOTODIODE
Si photodiode
S2592/S3477 series
Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR
S2592/S3477 series sensors combine a UV to near infrared Si photodiode with a thermoelectric cooler. A thermistor is also included in the same
package to sense the Si photodiode chip temperature. This allows stable operation over long periods of time, making these sensors suitable for
low-light-level detection where a high S/N is required.
S2592 series is hermetically sealed in a TO-8 package, and S3477 series in a TO-66 package. A dedicated temperature controller (C1103-04)
and heatsink (A3179 series) are also available as options (sold separately).
Features
l High S/N
l High UV sensitivity
l Built-in thermistor allows stable operation
Applications
l Low-light-level detection
s General ratings
Parameter
Built-in photodiode
Window material
Active area
Package
S2592-03
S3477-03
S2592-04
S3477-04
Unit
S1336 series
-
Sapphire glass
-
2.4 × 2.4
5.8 × 5.8
mm
TO-8
TO-66
TO-8
TO-66
s Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
VR
5
V
Operating temperature
Topr
-40 to +70
°C
Storage temperature
Tstg
-55 to +85
°C
Allowable current for
thermoelectric cooler
Ite
1.5
A
T h er mistor po w er dissipation _Pth
0.2
mW
s Electrical and optical characteristics (Typ. Ta=25 °C)
Parameter
Symbol Condition
S2592-03 S3477-03 S2592-04 S3477-04
Spectral response range
λ
190 to 1100
Peak sensitivity wavelength λp
960
Photo sensitivity
S λ=λp
0.5
Short circuit current
Isc 100 lx, 2856 K
5
28
Dark current
ID VR=10 mV
10
25
Temperature coefficient of
dark current
TCID
1.15
Rise time
tr VR=0 V, RL=1 kΩ
0.2
1
Terminal capacitance
Ct VR=0 V
65
380
Shunt resistance
Rsh VR=10 mV
1
0.4
Noise equivalent power
NEP VR=0 V, λ=λp
8.1 × 10^-15
1.3 × 10^-14
Cooling temperature
∆T
35
Unit
nm
nm
A/W
µA
pA
times/°C
µs
pF
GΩ
W/Hz^1/2
°C
1