S2551_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si photodiode

Si photodiode
S2551
For visible to infrared precision photometry
S2551 is a Si photodiode having a long active area of 1.2 × 29.1 mm, designed for visible to infrared precision photometry.
Features
Long, narrow active area: 1.2 × 29.1 mm
High sensitivity
Low capacitance
Applications
Analytical instruments
Optical measurement equipment
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Reverse voltage
VR Max.
30
V
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-20 to +80
°C
Note: Absolute maximum ratings are the values that must not be exceeded at any time. If even one of the absolute maximum ratings
is exceeded even for a moment, the product quality may be impaired. Always be sure to use the product within the absolute
maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Spectral response range
Peak sensitivity wavelength
Photo sensitivity
Short circuit current
Dark current
Temperature coefficient of ID
Rise time
Terminal capacitance
Shunt resistance
Noise equivalent power
Symbol
λ
λp
S
Isc
ID
TCID
tr
Ct
Rsh
NEP
Condition
λ=λp
λ=663 nm
100 lx
VR=10 mV
VR=0 V, RL=1 kΩ
VR=0 V, f=10 kHz
VR=10 mV
VR=0 V, λ=λp
Min.
-
-
-
-
24
-
-
-
-
0.01
-
Typ.
340 to 1060
920
0.6
0.37
30
-
1.15
1.4
350
0.03
3.9 × 10^-14
Max.
-
-
-
-
-
1
-
-
-
-
-
Unit
nm
nm
A/W
A/W
μA
nA
times/°C
μs
pF
GΩ
W/Hz^1/2
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