S2551 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si photodiode For visible to infrared precision photometry

PHOTODIODE
Si photodiode
S2551
For visible to infrared precision photometry
S2551 is a Si photodiode having a long active area of 1.2 × 29.1 mm, designed for visible to infrared precision photometry.
Features
l Long, narrow active area: 1.2 × 29.1 mm
l High sensitivity
l Low capacitance
Applications
l Analytical instruments
l Optical measurement equipment
s Absolute maximum ratings
Parameter
Symbol
Reverse voltage
VR Max.
Operating temperature
Topr
Storage temperature
Tstg
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Spectral response range
λ
Peak sensitivity wavelength λp
Photo sensitivity
S
λ=λp
λ=663 nm
Short circuit current
Isc 100 lx
Dark current
ID VR=10 mV
T e m p erature coefficient of ID _TCID
Rise time
tr VR=0 V, RL=1 kΩ
Terminal capacitance
Ct VR=0 V, f=10 kHz
Shunt resistance
Rsh VR=10 mV
Noise equivalent power
NEP VR=0 V, λ=λp
Value
30
-20 to +60
-20 to +80
Min.
-
-
-
-
24
-
-
-
-
0.01
-
Typ.
320 to 1060
920
0.6
0.37
30
-
1.15
1.4
350
0.03
3.9 × 10^-14
Max.
-
-
-
-
-
1
-
-
-
-
-
Unit
V
°C
°C
Unit
nm
nm
A/W
A/W
µA
nA
times/°C
µs
pF
GΩ
W/Hz^1/2