S2387_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si photodiodes

Si photodiodes
S2387 series
For visible to IR, general-purpose photometry
Features
High sensitivity in visible to infrared range
Low dark current
High linearity
Applications
Analytical equipment
Optical measurement equipment, etc.
Structure / Absolute maximum ratings
Type No.
Window
material
Package
(mm)
Photosensitive
area size
Effective
photosensitive
area
(mm)
(mm²)
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature temperature
VR max
Topr
Tstg
(V)
(°C)
(°C)
S2387-16R
2.7 × 15
1.1 × 5.9
6.4
S2387-33R
6 × 7.6
2.4 × 2.4
5.7
S2387-66R
Resin potting 8.9 × 10.1
5.8 × 5.8
33
30
-20 to +60
-20 to +80
S2387-1010R
15 × 16.5
10 × 10
100
S2387-130R
3.0 × 40
1.2 × 29.1
35
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Spectral Peak
response sensitivity
range wavelength
λ
λp
(nm)
S2387-16R
S2387-33R
S2387-66R 340 to 1100
S2387-1010R
S2387-130R
(nm)
960
Photosensitivity
S
(A/W)
Short circuit
current
Isc
100 lx
Dark
current
ID
VR=10 mV
Max.
Temp.
coefficient
of ID
TCID
Rise time
tr
VR=0 V
RL=1 kΩ
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
Noise
equivalent
power
NEP
VR=0 V
λ=λp
λp _{GaP He-Ne} Min. Typ.
LED laser
560 nm 633 nm (μA) (μA) (pA) (times/°C) (μs)
Min. Typ.
(pF) (GΩ) (GΩ) (W/Hz^1/2)
4.4 6.0
5
4.4 5.8
0.58 0.33 0.37 24 31
50
68 91 200
25 32 100
1.12
1.8
730
2 50 9.9 × 10^-16
10
4300 0.2 10 2.2 × 10^-15
33
12000 0.05 5 3.1 × 10^-15
11
5000 0.1 20 1.6 × 10^-15
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