S2387 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si photodiode For visible to IR, general-purpose photometry

PHOTODIODE
Si photodiode
S2387 series
For visible to IR, general-purpose photometry
Features
l High sensitivity
l Low dark current
l High linearity
Applications
l Analytical equipment
l Optical measurement equipment, etc.
s General ratings / Absolute maximum ratings
Type No.
S2387-16R
S2387-33R
S2387-66R
S2387-1010R
S2387-130R
Dimensional
outline/
Window
material *
➀/R
➁/R
➂/R
➃/R
➄/R
Package
(mm)
2.7 × 15
6 × 7.6
8.9 × 10.1
15 × 16.5
3.0 × 40
Active
area size
(mm)
1.1 × 5.9
2.4 × 2.4
5.8 × 5.8
10 × 10
1.2 × 29.1
Effective
active area
(mm²)
6.4
5.7
33
100
35
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature temperature
VR Max.
Topr
Tstg
(V)
(°C)
(°C)
30
-20 to +60 -20 to +80
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Peak
Spectral sensi-
response tivity
range wave-
λ length
λp
(nm) (nm)
Photo sensitivity
S
(A/W)
λp
GaP He-Ne
LED laser
Short circuit
current ^Dark
Isc ^current
100 lx
ID
Min. Typ. ^{VR=10 m V}
Max.
Temp.
coeffi-
cient
of ID
Rise time
tr
VR=0 V
Terminal
capaci-
tance
Ct
Shunt
resistance
Rsh
VR=10 mV
TCID _{RL=1 kΩ VR=0 V}
f=10 kHz _{Min. Typ.}
NEP
VR=0 V
λ=λp
560 nm 633 nm _{(µA) (µA) (pA) (times/° C) (µs)}
(pF) (GΩ) (GΩ) (W/Hz^1/2)
S2387-16R
S2387-33R
4.4 6.0
4.4 5.8
5
1.8
730 2 50 9.9 × 10^-16
S2387-66R
320 to 1100 960 0.58 0.33 0.37 24 31 50 1.12 10
4300 0.2 10 2.2 × 10^-15
S2387-1010R
68 91 200
33 12000 0.05 5 3.1 × 10^-15
S2387-130R
25 32 100
11
5000 0.1 20 1.6 × 10^-15
* Window material, R: resin coating
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