S2386_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si photodiodes

Si photodiodes
S2386 series
For visible to near IR, general-purpose photometry
Features
High sensitivity in visible to near infrared range
Low dark current
High reliability
Superior linearity
Applications
Analytical instruments
Optical measurement equipment
Structure / Absolute maximum ratings
Type no.
Dimensional
outline/
Window material*
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
(1)/K
(2)/L
(3)/K
(4)/K
(5)/K
(6)/K
Package
TO-18
TO-5
TO-8
Photosensitive
area size
(mm)
1.1 × 1.1
2.4 × 2.4
3.6 × 3.6
3.9 × 4.6
5.8 × 5.8
Absolute maximum ratings
Reverse voltage
VR max
Operating
temperature
Topr
Storage
temperature
Tstg
(V)
(°C)
(°C)
30
-40 to +100
-55 to +125
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product
within the absolute maximum ratings.
* Window material K=borosilicate glass, L=lens type borosilicate glass
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type no.
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
Spectral Peak
response sensitivity
range wavelength
λ
λp
(nm)
(nm)
Photosensitivity
S
(A/W)
GaP He-Ne GaAs
λp
LED laser LED
560 633 930
nm nm nm
Short
circuit
current
Isc
100 lx
Min. Typ.
(μA) (μA)
Dark
current
ID
VR=
10 mV
max.
(pA)
Temp.
coefficient
of ID
TCID
(times/°C)
Rise time
tr
VR=0 V
RL=1 kΩ
(μs)
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
(pF)
Shunt
resistance
Rsh
VR=10 mV
Min. Typ.
(GΩ) (GΩ)
Noise
equivalent
power
NEP
VR=0 V
λ=λp
(W/Hz^1/2)
1 1.3 ₂
4 5.7
0.4
140
5 100 6.8 × 10^-16
320 to
1100
960
4.4 6.0 5
0.6 0.38 0.43 0.59 _{9.6 12 20}
1.12
1.8
3.6
12 17 30
5.5
730
1600
2300
2 50 9.6 × 10^-16
0.5 _{25 1.4 × 10-15}
0.3
26 33 50
10
4300 0.2 10 2.1 × 10^-15
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