S2386 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si photodiode For visible to IR, general-purpose photometry

PHOTODIODE
Si photodiode
S2386 series
For visible to IR, general-purpose photometry
Features
l High sensitivity
l Low dark current
l High reliability
l High linearity
Applications
l Analytical equipment
l Optical measurement equipment
s General ratings / Absolute maximum ratings
Type No.
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
Dimensional
outline/
Window
material *
➀/K
➁/L
➂/K
➃/K
➄/K
Package
(mm)
TO-18
TO-5
TO-8
Active
area size
(mm)
1.1 × 1.1
2.4 × 2.4
3.6 × 3.6
3.9 × 4.6
5.8 × 5.8
Effective
active area
(mm²)
1.2
5.7
13
17.9
33
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature temperature
VR Max.
Topr
Tstg
(V)
(°C)
(°C)
30
-40 to +100 -55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
Spectral Peak
response ^sensitivity
range ^wavelength
λ
λp
(nm) (nm)
Photo sensitivity
S
(A/W)
GaP ^{H e- N e GaAs}
Short circuit
current
Isc
100 lx
Dark
current
ID
VR=10 mV
Max.
Temp.
coefficient
of ID
TCID
Rise time
tr
VR=0 V
RL=1 kΩ
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
VR=0 V
λ=λp
λp LED ^{laser LE D} Min. Typ.
Min. Typ.
560 nm 633 nm 930 nm _{(µA) (µA) (pA)} (times/° C) _(µs)
(pF) (GΩ) (GΩ) (W/Hz^1/2)
1 1.3
4 5.7
2
0.4
140 5 100 6.8 × 10^-16
320 to 1100 960
0.6
0.38 0.43 0.59
4.4
9.6
6.0
12
5
20
1.12
1.8
3.6
12 17 30
5.5
730
1600
2300
2 50 9.6 × 10^-16
0.5
0.3
25
1.4 × 10^-15
26 33 50
10
4300 0.2 10 2.1 × 10^-15
* Window material K: borosilicate glass, L: lens type borosilicate glass
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