S1337 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si photodiode For UV to IR, precision photometry

PHOTODIODE
Si photodiode
S1337 series
For UV to IR, precision photometry
Features
l High UV sensitivity: QE 75 % (λ=200 nm)
l Low capacitance
Applications
l Analytical equipment
l Optical measurement equipment
s General ratings / Absolute maximum ratings
Type No.
S1337-16BQ
S1337-16BR
S1337-33BQ
S1337-33BR
S1337-66BQ
S1337-66BR
S1337-1010BQ
S1337-1010BR
Dimensional
outline/
Window
material *
➀/Q
➁/R
➂/Q
➃/R
➄/Q
➅/R
➆/Q
➇/R
Package
(mm)
2.7 × 15
6 × 7.6
8.9 × 10.1
15 × 16.5
Active area Effective active
size
area
(mm)
1.1 × 5.9
(mm²)
5.9
2.4 × 2.4
5.7
5.8 × 5.8
33
10 × 10
100
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature temperature
VR Max.
Topr
Tstg
(V)
(°C)
(°C)
5
-20 to +60 -20 to +80
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Spectral
response
range
λ
Peak
sensitivity
wavelength
λp
Photo sensitivity
S
(A/W)
He-Ne GaAs
λp 200 nm _{laser LE D}
Short circuit
current
Isc
100 lx
Min. Typ.
Dark
current
ID
VR=10 mV
Max.
Temp.
coefficient
of
ID
TCID
Rise time
tr
VR=0 V
RL= 1 kΩ
Terminal
capacitance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
(nm) (nm)
Min. Typ.
633
nm
930
nm
(µA)
(µA)
(pA) ^{(times/° C)}
(µs)
Min. Typ.
(pF) (GΩ) (GΩ) (W/Hz^1/2)
S1337-16BQ ^{190 to 1100}
S1337-16BR ^{320 to 1100}
0.5 0.10 0.12 0.33 0.5 4.0 5.3
0.62 - - 0.4 0.6 4.4 6.2
50
0.2
65
0.2
0.6
1.0
8.4
× 10^-14
× 10^-15
S1337-33BQ
S1337-33BR
S1337-66BQ
S1337-66BR
190 to 1100
0.5 0.10 0.12 0.33 0.5 4.0 5.0
320 to 1100
190 to 1100
960
0.62 - - 0.4 0.6
0.5 0.10 0.12 0.33 0.5
4.4
20
6.2
27
320 to 1100
0.62 - - 0.4 0.6 22 33
30
100
1.15
0.2
1
65
0.3
1
8.1 × 10^-15
6.5 × 10^-15
380
0.1
0.4
1.3
1.0
× 10^-14
× 10^-14
S1337-1010BQ ^{190 to 1100}
S1337-1010BR ^{320 to 1100}
0.5 0.10 0.12 0.33 0.5 65 78
0.62 - - 0.4 0.6 70 95
200
3
1100
0.05
0.2
1.8
1.5
× 10^-14
× 10^-14
* Window material Q: quartz glass, R: resin coating
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