S1336 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si photodiode UV to near IR for precision photometry

PHOTODIODE
Si photodiode
S1336 series
UV to near IR for precision photometry
Features
G High sensitivity
G Low capacitance
G High reliability
Applications
G Analytical instruments
G Optical measurement equipment
I General ratings / Absolute maximum ratings
Type No.
S1336-18BQ
S1336-18BK
S1336-5BQ
S1336-5BK
S1336-44BQ
S1336-44BK
S1336-8BQ
S1336-8BK
Dimensional
outline/
Window
material *
➀/Q
➀/K
➁/Q
➁/K
➁/Q
➁/K
➂/Q
➂/K
Package
(mm)
TO-18
TO-5
TO-8
Active
area size
(mm)
1.1 × 1.1
2.4 × 2.4
3.6 × 3.6
5.8 × 5.8
Effective
active area
(mm²)
1.2
5.7
13
33
Absolute maximum rating
Reverse voltage
V4 Max.
Operating
temperature
Topr
Storage
temperature
Tstg
(V)
(°C)
(°C)
-20 to +60
-55 to +80
-40 to +100 -55 to +125
-20 to +60
-55 to +80
5
-40 to +100
-20 to +60
-55 to +125
-55 to +80
-40 to +100 -55 to +125
-20 to +60
-55 to +80
-40 to +100 -55 to +125
I Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
Spectral
response
range
l
Peak
sensi-
tivity
wave-
length
lp
(nm)
S1336-18BQ 190 to 1100
S1336-18BK 320 to 1100
S1336-5BQ 190 to 1100
S1336-5BK 320 to 1100
S1336-44BQ 190 to 1100
S1336-44BK 320 to 1100
S1336-8BQ 190 to 1100
S1336-8BK 320 to 1100
(nm)
960
Photo sensitivity
S (A/W)
lp
200 nm
He-Ne
laser
Min. Typ.
633
nm
Short circuit
current
Isc
100 lx
Min. Typ.
(µA) (µA)
Dark
current
I,
VR=10 mV
Max.
Temp.
coeffi-
cient
of I,
T+1,
Terminal
Rise time capaci-
tr
tance
VR=0 V Ct
RL=1 k9 VR=0 V
f=10 kHz
(pA) (times/°C) (µs) (pF)
Shunt
resistance
Rsh
VR=10 mV
Min. Typ.
(GW) (GW)
NEP
(W/Hz^1/2)
0.10 0.12
--
1 1.2 20
0.1
20 0.5 2 5.7 × 10^-15
0.10 0.12
0.5
--
0.10 0.12
0.33
--
4
8
5
10
30
50
0.2
1.15
0.5
65 0.3 1 8.1 × 10^-15
150 0.2 0.6 1.0 × 10^-14
0.10 0.12
--
22 28 100
1
380 0.1 0.4 1.3 × 10^-14
* Window material, K: borosilicate glass, Q: quartz glass
1