S12271_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si PIN photodiode

Si PIN photodiode
S12271
Large area, high-speed PIN photodiode for UV
to near IR photometry
The S12271 is a high-speed Si PIN photodiode having a large photosensitive area of φ4.1 mm. Using quartz glass as the
light input window, this photodiode delivers high sensitivity extending to the UV region and is suitable for optical power
meters.
Features
Quartz glass window
High UV sensitivity
Large photosensitive area: φ4.1 mm
High-speed response: 60 MHz (VR=100 V)
Applications
Optical power meters
Radiation detectors
Structure
Parameter
Package
Photosensitive area size
Effective photosensitive area
Specification
Unit
TO-8
mm
φ4.1
mm
13.2
mm²
Absolute maximum ratings
Parameter
Symbol
Specification
Unit
Reverse voltage
VR max
120
V
Power dissipation
P
50
mW
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-55 to +80
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
190 to 1100
-
nm
Peak sensitivity wavelength
λp
-
960
-
nm
Photosensitivity
S
λ=λp
λ=200 nm
0.4
0.5
0.08
0.10
-
A/W
-
A/W
Dark current
ID
VR=100 V
-
0.1
30
nA
Temperature coefficient of ID
TCID
-
1.15
-
times/°C
Terminal capacitance
Ct
VR=100 V, f=1 MHz
-
10
20
pF
Cutoff frequency
fc
VR=100 V, RL=50 Ω
-3 dB
-
60
-
MHz
Noise equivalent power
NEP λ=λp, VR=100 V
-
1.5 × 10^-14
-
W/Hz^1/2
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