S1226-5BK Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – SI PHOTO DIODE

PHOTODIODE
Si photodiode
S1226 series
For UV to visible, precision photometry; suppressed IR sensitivity
Features
l High UV sensitivity: QE 75 % (λ=200 nm)
l Suppressed IR sensitivity
l Low dark current
l High reliability
Applications
l Analytical equipment
l Optical measurement equipment, etc.
s General ratings / absolute maximum ratings
Type No.
S1226-18BQ
S1226-18BK
S1226-5BQ
S1226-5BK
S1226-44BQ
S1226-44BK
S1226-8BQ
S1226-8BK
Dimensional
outline/
Window
material *
➀/Q
➀/K
➁/Q
➁/K
➁/Q
➁/K
➂/Q
➂/K
Package
(mm)
TO-18
TO-5
TO-8
Active
area size
(mm)
1.1 × 1.1
2.4 × 2.4
3.6 × 3.6
5.8 × 5.8
Effective
active area
(mm²)
1.2
5.7
13
33
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature temperature
VR Max.
Topr
Tstg
(V)
(°C)
(°C)
-20 to +60 -55 to +80
-40 to +100 -55 to +125
-20 to +60 -55 to +80
5
-40 to +100 -55 to +125
-20 to +60 -55 to +80
-40 to +100 -55 to +125
-20 to +60 -55 to +80
-40 to +100 -55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Type No.
S1226-18BQ
S1226-18BK
S1226-5BQ
S1226-5BK
S1226-44BQ
S1226-44BK
S1226-8BQ
S1226-8BK
Peak
Spectral sensi-
response tivity
range wave-
λ length
λp
Photo sensitivity
S
(A/W)
λp
200 nm
He-Ne
laser
Short circuit
current
Isc
100 lx
Dark
current
ID
VR=10 mV
Min. Typ. Max.
Temp.
coeffi-
cient
of ID
TCID
Rise time
tr
VR=0 V
RL=1 kΩ
Terminal
capaci-
tance
Ct
VR=0 V
f=10 kHz
Shunt
resistance
Rsh
VR=10 mV
NEP
(nm) (nm)
Min. Typ. 633 nm _{(µA) (µA) (pA) (times/° C) (µs)}
Min. Typ.
(pF) (GΩ) (GΩ) (W/Hz^1/2)
190 to 1000
320 to 1000
0.10 0.12
--
0.5 0.66 2
0.15
35 5 50 1.6 × 10^-15
190 to 1000
0.10 0.12
320 to 1000
190 to 1000 ⁷²⁰
0.36
--
0.10 0.12
0.34
320 to 1000
--
2.2 2.9
4.4 5.9
5
10
1.12
0.5
1
160 2 20 2.5 × 10^-15
380 1 10 3.6 × 10^-15
190 to 1000
320 to 1000
0.10 0.12
--
12 16 20
2
950 0.5 5 5.0 × 10^-15
* Window material, K: borosilicate glass, Q: quartz glass