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S1223_15 Datasheet, PDF (1/3 Pages) Hamamatsu Corporation – Si PIN photodiodes
Si PIN photodiodes
S1223 series
For visible to near IR, precision photometry
Features
High sensitivity in visible to near infrared range
High reliability
High-speed response
S1223: fc=30 MHz
S1223-01: fc=20 MHz
Low capacitance
Applications
Optical measurement equipment
Analytical equipment, etc.
Structure
Parameter
Dimensional outline
Window material
Package
Photosensitive area size
Effective photosensitive area
S1223
(1)
2.4 × 2.8
6.6
Borosilicate glass
TO-5
S1223-01
(2)
3.6 × 3.6
13
Unit
-
-
-
mm
mm2
Absolute maximum ratings
Parameter
Symbol
S1223
S1223-01
Unit
Reverse voltage
VR max
30
V
Power dissipation
P
100
mW
Operating temperature
Topr
-40 to +100
°C
Storage temperature
Tstg
-55 to +125
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product
within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol Condition
S1223
Min.
Typ.
Spectral response range λ
-
320 to 1100
Peak sensitivity wavelength λp
-
960
λ=λp
-
0.6
Photosensitivity
λ=660 nm
S λ=780 nm
-
0.45
-
0.52
Short circuit current
λ=830 nm
Isc 100 lx
-
0.54
5
6.3
Dark current
ID VR=20 V
-
0.1
Temp. coefficient of ID
TCID
-
1.15
Cutoff frequency
fc VR=20 V, -3 dB
-
30
Terminal capacitance
Ct VR=20 V, f=1 MHz
-
10
Noise equivalent power NEP VR=20 V, λ=λp
-
9.4 × 10-15
Max.
-
-
-
-
-
-
-
10
-
-
-
-
S1223-01
Min.
Typ.
Max.
-
320 to 1100
-
-
960
-
-
0.6
-
-
0.45
-
-
0.52
-
-
0.54
-
10
13
-
-
0.2
10
-
1.15
-
-
20
-
-
20
-
-
1.3 × 10-14
-
Unit
nm
nm
A/W
μA
nA
times/°C
MHz
pF
W/Hz1/2
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