S1223_06 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – Si PIN photodiode For visible to IR, precision photometry

PHOTODIODE
Si PIN photodiode
S1223 series
For visible to IR, precision photometry
Features
l High sensitivity
l High reliability
l High-speed response
S1223: fc=30 MHz
S1223-01: fc=20 MHz
l Low capacitance
Applications
l Optical measurement equipment
l Analytical equipment, etc.
s General ratings
Parameter
Symbol
S1223
S1223-01
Unit
Window material
-
borosilicate glass
-
Package
-
TO-5
-
Active area size
A
Effective active area
-
2.4 × 2.8
6.6
3.6 × 3.6
13
mm
mm²
s Absolute maximum ratings
Parameter
Symbol
S1223
S1223-01
Unit
Reverse voltage
VR Max.
30
V
Power dissipation
P
100
mW
Operating temperature Topr
-40 to +100
°C
Storage temperature
Tstg
-55 to +125
°C
s Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Spectral response range λ
-
Peak sensitivity wavelength _λp
-
λ=λp
-
Photo sensitivity
S
λ=660 nm
λ=780 nm
-
-
λ=830 nm
-
Short circuit current
Isc 100 lx
5
Dark current
ID VR=20 V
-
Temp. coefficient of ID
TCID
-
Cut-off frequency
fc VR=20 V, -3 dB
-
Terminal capacitance
Ct VR=20 V, f=1 MHz
-
Noise equivalent power NEP VR=20 V, λ=λp
-
S1223
Typ.
320 to 1100
960
0.6
0.45
0.52
0.54
6.3
0.1
1.15
30
10
9.4 × 10^-15
Max.
-
-
-
-
-
-
-
10
-
-
-
-
S1223-01
Min.
Typ.
Max.
Unit
- ^{320 to 1100} -
nm
-
960
-
nm
-
0.6
-
-
-
0.45
0.52
-
-
A/W
-
0.54
-
10
13
-
µA
-
0.2
10
nA
-
1.15
- times/°C
-
20
-
MHz
-
20
-
pF
-
1.3 × 10^-14
-
W/Hz^1/2
1