S11865-64_15 Datasheet, PDF (1/14 Pages) Hamamatsu Corporation – Photodiode arrays combined with signal processing IC

Photodiode arrays with amplifiers
S11865-64/-128/-256
S11866-64-02/-128-02
Photodiode arrays combined with signal
processing IC
The S11865/S11866 series are Si photodiode arrays combined with a signal processing IC chip. X-ray tolerance has been im-
proved compared to the previous products (S8865/S8866 series). The signal processing IC chip is formed by CMOS process
and incorporates a timing generator, shift register, charge amplifier array, clamp circuit and hold circuit, making the external
circuit configuration simple. A long, narrow image sensor can also be configured by arranging multiple arrays in a row. For X-
ray detection applications, types with phosphor sheet affixed on the photosensitive area are also available.
As the dedicated driver circuit, the C9118 series (sold separately) is provided (this circuit does not support the S11865-256).
Features
Data rate: 1 MHz max.
Element pitch: 5 types available
S11865-64: 0.8 mm pitch × 64 ch
S11865-128: 0.4 mm pitch × 128 ch
S11865-256: 0.2 mm pitch × 256 ch
S11866-64-02: 1.6 mm pitch × 64 ch
S11866-128-02: 0.8 mm pitch × 128 ch
5 V power supply operation
Simultaneous integration by using a charge amplifier array
Sequential readout with a shift register
Low dark current due to zero-bias photodiode operation
Integrated clamp circuit allows low noise and wide dynamic range
Integrated timing generator allows operation at two
different pulse timings
Types with phosphor sheet affixed on the photosensitive
area are available for X-ray detection
(S11865-64G/-128G/-256G, S11866-64G-02/-128G-02)
Applications
Long and narrow line sensors
Line sensors for X-ray detection
Structure
Parameter
Symbol*¹
Element pitch
P
Element width
W
Element height
H
Number of elements
-
Effective photosensitive area length -
Board material
-
*1: Refer to following figure.
S11865-64
0.8
0.7
0.8
64
51.2
S11865-128
0.4
0.3
0.6
128
51.2
S11865-256
0.2
0.1
0.3
256
51.2
Glass epoxy
S11866-64-02 S11866-128-02 Unit
1.6
0.8
mm
1.5
0.7
mm
1.6
0.8
mm
64
128
-
102.4
102.4
mm
-
Enlarged drawing of photosensitive area
W
Photodiode
P
KMPDC0072EA
www.hamamatsu.com
1