S11499_15 Datasheet, PDF (1/3 Pages) Hamamatsu Corporation – Si PIN photodiodes

IR-enhanced Si PIN photodiodes
S11499 series
Large area, enhanced near IR sensitivity,
using a MEMS technology
HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS struc-
ture formed on the back side of the photodiode. The S11499 series is a family of Si PIN photodiodes with drastically im-
proved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the
S11499 series has much higher sensitivity to YAG laser light (1.06 μm). It also offers improved temperature characteristics
of sensitivity at wavelengths longer than 950 nm.
Features
High sensitivity: 0.6 A/W (λ=1060 nm)
Large active area: φ5.0 mm (S11499-01)
High reliability package: TO-5/TO-8 metal package
Applications
YAG laser monitor
Structure
Parameter
Package
Window material
Photosensitive area
Effective photosensitive area
S11499
TO-5
φ3.0
7.0
Borosilicate glass
S11499-01
TO-8
φ5.0
19.6
Unit
-
-
mm
mm²
Absolute maximum ratings
Parameter
Reverse voltage
Operating temperature
Storage temperature
Symbol
Condition
VR max. Ta=25 °C
Topr
Tstg
S11499
S11499-01
Unit
30
V
-40 to +100
°C
-55 to +125
°C
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
S11499
Min.
Typ.
Max.
S11499-01
Min.
Typ.
Max.
Unit
Spectral response range
λ
- 360 to 1140 -
- 360 to 1140 -
nm
Peak sensitivity wavelength λp
-
1000
-
-
1000
-
nm
Photosensitivity
S λ=1060 nm
0.54
0.6
-
0.54
0.6
-
A/W
Short circuit current
Isc 100 lx
6.0
7.8
-
15
21
-
μA
Dark current
ID VR=20 V
-
0.05
5
-
0.1
10
nA
Cutoff frequency
fc
VR=20 V,
-3 dB, RL=50 Ω
-
30
-
-
15
-
MHz
Terminal capacitance
Ct VR=20 V, f=1 MHz
-
13
-
-
33
-
pF
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