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S10355-01_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – Si photodiodes
Si photodiodes
S10355-01 S10356-01
Back-illuminated type photodiodes employing
CSP structure
The S10355-01and S10356-01 are back-illuminated type photodiodes designed to minimize the dead areas at the device
edges by using a CSP (chip size package) structure. The CSP also allows using multiple devices in a tiled format.
Features
Allows multiple devices to be arranged in a tiled format
Tiled format minimizes the dead area between photo-
diodes and covers a large detection area.
Patterned electrodes for signal readout terminals
Lead pins and solder balls are available as signal read-
out terminals on the underside of the package.
Please contact us for details.
Easy coupling to scintillator
Maximizes the optical coupling efficiency to a scintil-
lator since no wire leads exist on the photosensitive
surface, making these photodiodes ideal as detectors
for X-ray non-destructive inspection systems.
Applications
General industrial mesurement
X-ray inspection system
Structure
Parameter
Package size
Chip size
Photosensitive area
S10355-01
7.52 × 7.52
7.37 × 7.37
6.97 × 6.97
S10356-01
Unit
3×3
mm
2.8 × 2.8
mm
2.5 × 2.5
mm
Absolute maximum ratings
Parameter
Symbol
Condition
Value
Unit
Reverse voltage
VR max Ta=25 °C
10
V
Operating temperature
Topr
-20 to +60
°C
Storage temperature
Tstg
-20 to +80
°C
Reflow soldering condition*
Tsol
Peak temperature 240 °C (see page 3)
-
Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the
product within the absolute maximum ratings.
* JEDEC level 5a
Electrical and optical characteristics (Ta=25 °C)
Parameter
S10355-01
S10356-01
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Spectral response range
λ
400 to 1100
400 to 1100
nm
Peak sensitivity wavelength
λp
-
960
-
-
960
-
nm
Photo sensitivity
Short circuit current
S
λ=960 nm
λ=540 nm
0.55 0.59
-
0.55 0.59
-
A/W
0.35 0.37
-
0.35 0.37
-
A/W
Isc 100 lx, 2856 K
30
40
-
4
5
-
μA
Dark current
ID VR=10 mV
-
0.1
1
-
0.01
0.3
nA
Rise time
tr
VR=0 V, RL=1 kΩ
λ=650 nm
-
20
-
-
15
-
μs
Terminal capacitance
Ct VR=0 V, f=10 kHz -
500
700
-
60
90
pF
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