S10200-02 Datasheet, PDF (1/11 Pages) Hamamatsu Corporation – Back-thinned TDI-CCD Operating the back-thinned CCD in TDI mode delivers high sensitivity.

IMAGE SENSOR
Back-thinned TDI-CCD
S10200-02, S10201-04, S10202-08, S10202-16
Operating the back-thinned CCD in TDI mode delivers high sensitivity.
TDI-CCD captures clear and bright images even under low-light-level conditions. During TDI mode, the CCD captures an image of a moving
object while transferring integrated signal charges synchronously with the object movement. This operation mode dramatically boosts sensitivity
to high levels even when capturing fast moving objects. Our new TDI-CCD uses the back-thinned structure to achieve even higher quantum
efficiency over a wide spectral range from UV to near IR region (200 to 1100 nm).
Features
l TDI mode gives high sensitivity
l High-speed, continuous image acquisition
l Back-thinned structure ensures high sensitivity from UV to
near IR
l Multiple ports for high-speed line rate
Applications
l Sequential imaging of high-speed moving samples
l Inspection tasks on electronic parts production line
l Semiconductor inspection
l Flow cytometery
TDI (Time Delay Integration) mode
In FFT-CCD, signal charges in each line are vertically transferred during charge readout. TDI mode synchronizes this vertical
transfer timing with the movement of the object, so that signal charges are integrated a number of times equal to the number
of vertical stages of the CCD pixels.
In the TDI mode, the signal charges must be transferred in the same direction at the same speed as those of the object to be
imaged. These speeds are expressed by the following equation:
v=f×d
v: Object moving speed, Charge transfer speed, f: Vertical transfer frequency, d: Pixel size
In the right figure, when the first stage charges are transferred
to the second stage, an additional charges are produced in the
second stage by photoelectric conversion and accumulated.
When this operation is continuously repeated until reaching
the last stage M (the number of vertical stages), signal charges
which are M times greater than the initial charges are accumu-
lated. Since the signal charges on each line are output from
the CCD horizontal shift register, a two-dimensional image
can be continuously acquired. In this way the TDI mode
achieves sensitivity which is M times higher than linear image
sensors (S/N is improved M times). The TDI mode also
improves sensitivity variations compared to frame mode op-
eration.
s Selection guide
Type No.
Pixel size
(µm)
S10200-02
S10201-04
S10202-08
S10202-16
12 × 12
Number of
total pixels
(H) × (V)
1040 × 128
2080 × 128
4160 × 128
4224 × 128
Number of
active pixels
(H) × (V)
1024 × 128
2048 × 128
4096 × 128
4096 × 128
q Schematic diagram showing integrated exposure by
TDI mode
Time1
Time2
Time3
FIRST STAGE
·
·
·
·
·
LAST STAGE M
Number
of ports
2
4
8
16
Pixel rate
(MHz/port)
30
KMPDC0139EA
Line rate
(kHz)
Vertical
transfer
50
Bidirectional
100
s Specifications
Parameter
TDI stage
Anti-blooming
Vertical clock
Horizontal clock
Output circuit
Package
W indow
PRELIMINARY DATA
Jan. 2007
Specification
128
FW × 100 (Min.)
3 phases
2 phases
Two-stage MOSFET source follower
Ceramic DIP
Quarts glass
1