English
Language : 

R8520-406 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – PHOTOMULTIPLIER TUBE
PHOTOMULTIPLIER TUBE
R8520-406
FEATURES
GFor Low Temperature Operation Down to -110 °C
GLow Radioactivity 26 mm (1 Inch) square
GHigh UV Sensitivity by Synthetic Silica Window
APPLICATIONS
GHigh Energy Physics
GAcademic Research
SPECIFICATIONS
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Window Material
Photocathode
MateriaI
Minimum Effective Area
Dynode
Structure
Number of Stages
Operating Ambient Temperature
Storage Temperature
Weight
Description / Value
160 to 650
420
Synthetic silica
Bialkali
20.5 × 20.5
Metal channel
10
-110 to +50
-110 to +50
22.9
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
Value
900
150
0.1
CHARACTERISTICS (at 25 °C)
Parameter
Min.
Typ.
Luminous (2856 K)
80
100
Cathode Sensitivity
Blue Sensitivity Index (CS 5-58)
Radiant at 420 nm
Quantum Efficiency at 175 nm
Anode Sensitivity
Luminous (2856 K)
Gain (× 106)
Anode Dark Current (After 30 minute storage in darkness)
9.0
11.0
—
100
—
30
40
100
—
1
—
2
Anode Pulse Rise Time
Time Response
Electron Transit Time
Transit Time Spread (FWHM)
Pulse Linearity (±2 % Deviation)
—
1.8
—
12.4
—
0.8
—
30
NOTE: Anode characteristics are measured with a voltage distribution ratio and supply voltage shown below.
Max.
—
—
—
—
—
—
20
—
—
—
—
Unit
nm
nm
—
—
mm2
—
—
°C
°C
g
Unit
V
V
mA
Unit
mA/lm
—
mA/W
%
A/W
—
nA
ns
ns
ns
mA
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Electrodes
K
G
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
Ratio
0.5 1.5
2
1
1
1
1
1
1
1
1
0.5
SuppIy Voltage: 800 V, K: Cathode, G: Grid, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2013 Hamamatsu Photonics K.K.