R8520-00-C12 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – POSITION SENSITIVE PHOTOMULTIPLIER TUBES

FEATURES
I 6 (X) + 6 (Y) Cross Plate Anode
I Flangeless Type
I High Speed Response
APPLICATIONS
I PET (Positron Emission Tomography)
I Compact Gamma Camera
I Scintillation Mammography
POSITION SENSITIVE
PHOTOMULTIPLIER TUBES
R8520-00-C12, R8520U-00-C12
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Window Material
Dynode
Structure
Number of Stages
Anode
Weight
Suitable Socket
Operating Ambient Temperature
Storage Temperature
Description
300 to 650
420
Bialkali
22 × 22
Borosilicate glass
Metal channel dynode
11
6 (X) + 6 (Y) Cross plate anode
Approx. 28 (U Type: Approx. 38)
E678-32B (sold separately)
-80 to +50 (U Type: -30 to +50)
-80 to +50 (U Type: -30 to +50)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Average Anode Current in Total
Value
1000
0.1
CHARACTERISTICS (at 25 °C)
Parameter
Min.
Luminous (2856 K)
50
Cathode Sensitivity Quantum Efficiency at 420 nm
—
Blue Sensitivity Index (CS 5-58)
7
Anode Sensitivity
Luminous (2856 K)
15
Gain
—
Anode Dark Current in Total of Anodes
(after 30 min storage in darkness)
—
Anode Pulse Rise Time
—
Time Response
Electron Transit Time
—
Transit Time Spread (FWHM)
—
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
Typ.
80
24
9
70
0.9 × 10⁶
2
2.4
11.5
1.0
Max.
—
—
—
—
—
10
—
—
—
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
K G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 P
Ratio
0.5 1.5 2 1 1 1 1 1 1 1 1 1 0.5
Supply Voltage: 800 V, K: Cathode, G: Grid, Dy: Dynode, P: Anode
Unit
nm
nm
—
mm
—
—
—
—
g
—
°C
°C
Unit
V
mA
Unit
µA/lm
%
—
A/lm
—
nA
ns
ns
ns
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2004 Hamamatsu Photonics K.K.