R7518_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – PHOTOMULTIPLIER TUBES

PHOTOMULTIPLIER TUBES
R7518
R7518P (For Photon Counting)
High Sensitivity with Low Noise Photocathode
FEATURES
GSpectral Response .................................. 185 nm to 730 nm
GHigh Cathode Sensitivity
Luminous ......................................................... 130 µA/lm
Radiant at 410 nm ............................................. 85 mA/W
GHigh Anode Sensitivity (at 1000 V)
Luminous ......................................................... 1560 A/lm
Radiant at 410 nm ..................................... 10.2 × 10⁵ A/W
GLow Dark Current ....................................................... 0.2 nA
GLow Dark Counts (R7518P) ......................................... 10 s^-1
APPLICATIONS
GChemiluminescence Detection
GBioluminescence Detection
GFluorescence Spectrometer
GSO2 Monitor (UV Fluorescence)
SPECIFICATIONS
GENERAL
Parameter
Description / Value
Spectral Response
Wavelength of Maximum Response
185 to 730
410
Photocathode
MateriaI
Minimum Effective Area
Window Material
Low noise bialkali
8 × 24
UV glass
Dynode
Secondary Emitting Surface
Low noise bialkali
Structure
Circular-cage
Number of Stages
9
Direct Interelectrode Capacitances
Anode to Last Dynode
4
Anode to All Other Electrode
Base
6
11-pin base
JEDEC No. B11-88
Weight
Operating Ambient Temperature
Storage Temperature
45
-30 to +50
-30 to +50
SuitabIe Socket
E678–11A (Sold Separately)
SuitabIe Socket Assembly
E717–63 (Sold Separately)
E717-74 (Sold Separately)
Unit
nm
nm
—
mm
—
—
—
—
pF
pF
—
g
°C
°C
—
—
Figure 1: Typical Spectral Response
TPMSB0177EA
100
10
CATHODE
RADIANT
SENSITIVITY
1
QUANTUM
EFFICIENCY
0.1
0.01
100 200 300 400 500 600 700 800
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.