R7110U-07 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – COMPACT HYBRID PHOTO-DETECTOR

PRELIMINARY DATA
SEPT. 2000
COMPACT HYBRID
PHOTO-DETECTOR
with Si-Avalanche Diode Target
R7110U-07
FEATURES
q Low excess noise
q High gain
q Operable in high magnetic fields
q Low hysteresis
APPLICATIONS
q High energy physics
q Medical
q Other high precision measurements
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area ^a
Window Material
Target
Suitable Socket
Description/Value
160 to 850
420
Multialkali
8
Synthetic Silica
3 mm Single-element Electron
Bombarded Si-Avalanche Diode
E678-12M (Supplied)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Avalanche Diode Reverse Bias Voltage
Ambient Temperature
Value
-8500
155 ^b
-40 to +50
CHARACTERISTICS (at 25 °C)
Parameter
Min.
Cathode Sensitivity
Luminous (2856K)
Radiant at 420 nm
100
—
Gain ^c
—
Rise Time
—
Time Response ^c
Fall Time
—
Width
—
Diode (Target)
Leakage Current ^d
Capacitance ^d
—
—
NOTE: aWithout magnetic fields
bat 25 °C
cPhotocathode Voltage: - 8 kV, Avalanche Diode Reverse Bias Voltage: approx.145 V
dAvalanche Diode Reverse Bias Voltage: approx.145 V
Typ.
130
51
4 × 10⁴
1.3
15
5
—
120
Max.
—
—
—
—
—
—
50
—
Unit
nm
nm
—
mm dia.
—
—
—
Unit
Vdc
V
°C
Unit
µA/lm
mA/W
—
ns
ns
ns
nA
pF
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. _©2000 Hamamatsu Photonics K.K.