R6427_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – PHOTOMULTIPLIER TUBES

PHOTOMULTIPLIER TUBES
R6427,R7056
Fast Time Response, For Scintillation Counting and High Energy Physics
R6427: Borosilicate Glass, R7056: UV Glass
GENERAL
Parameter
Spectral Response
R6427
R7056
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
R6427
R7056
Dynode
Structure
Number of Stages
Operating Ambient Temperature
Storage Temperature
Base
Suitable Socket
Description / Value
300 to 650
185 to 650
420
bialkali
25
Borosilicate glass
UV glass
Linear focused
10
-30 to +50
-80 to +50
14-pin glass base
E678-14C (supplied)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
Value
2000
350
0.1
CHARACTERISTICS (at 25 °C)
Parameter
Luminous (2856 K)
Min.
70
Cathode Sensitivity
Radiant at 420 nm
—
Blue Sensitivity Index (CS 5-58)
—
Anode Sensitivity
Luminous (2856 K)
Radiant at 420 nm
—
—
Gain
—
Anode Dark Current (after 30 min. storage in darkness)
—
Anode Pulse Rise Time
—
Time Response
Electron Transit Time
—
Transit Time Spread (FWHM)
—
Pulse Linearity (at 2 % deviation)
—
NOTE: Anode characteristics are measured with the voItage distribution ratio A shown below.
( ): Pulse linearity is measured with the voltage distribution ratio B shown below.
Typ.
100
88
11.0
500
4.4 × 10⁵
5.0 × 10⁶
10
1.7
16
500
10 (100)
Max.
—
—
—
—
—
—
200
—
—
—
—
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
Ratio A
4
1 1.5 1
1
1
1
1
1
1
1
Ratio B (Tapered) 4
1 1.5 1
1
1 1.2 1.5 2 3.3 3
Capacitors (µF)
0.01 0.02 0.02 0.04 0.06
Supply Voltage: 1500 Vdc, K: Cathode, DY: Dynode, P: Anode
Unit
nm
nm
nm
—
mm
—
—
—
—
°C
°C
—
—
Unit
V
V
mA
Unit
µA/lm
mA/W
—
A/lm
A/W
—
nA
ns
ns
ps
mA
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.