R5912 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – PHOTOMULTIPLIER TUBE

PHOTOMULTIPLIER TUBE
R5912
APPLICATIONS
For High Energy Physics
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Effective Area
Window Material
Dynode
Structure
Number of Stages
Direct Interelectrode
Anode to Last Dynode
Capacitances (Approx.) Anode to All Other Dynode
Base
Weight
Suitable Socket
Description/Value
300 to 650
420
Bialkali
530 (Min. 450)
Borosilicate glass
Box and Line
10
3
7
20-pin base JEDEC B20-102
Approx. 720
E678-20A (supplied)
CHARACTERISTICS (at 25°C)
Parameter
Luminous (2856K)
Cathode Sensitivity
Radiant at 420nm
Blue (CS 5-58 filter)
Quantum Efficiency at 390nm
Anode Sensitivity ¹⁾
Luminous (2856K)
Radiant at 420nm
Gain ¹⁾
Supply Voltage for Gain of 10⁷
Anode Dark Current (after 30min. storage in darkness) ¹⁾
Dark Count (after dark condition for 15 hours) ¹⁾
Anode Pulse Rise Time
Time Response ¹⁾
Electron Transit Time
Transit Time Spread (FWHM) ³⁾
Pre Pulse ⁴⁾
4ns to 20ns before Main pulse
Late Pulse ³⁾
8ns to 60ns after Main pulse
After Pulse ³⁾
100ns to 16µns after Main pulse
Single Photoelectron
PHD (Peak to Valley Ratio)
Pulse Linearity ²⁾
at ±2% Deviation
at ±5% Deviation
Magnetic characteristics
(at 200mG/20µT)
Sensitivity Degradation
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
70
72
9.0
22
700
7.2 × 10⁵
1.0 × 10⁷
1500
50
4
3.8
55
2.4
0.5
1.5
2
2.5
60
80
10
1) Measured with the condition shown in the Table 1.
2) Measured with the condition shown in the Table 2.
3) Measured with 0.25 photoelectrons detection threshold (at single photoelectron/ event).
4) Measured with 0.25 photoelectrons detection threshold (at 50 photoelectron/ event).
Max.
—
—
—
—
—
—
—
1800
700
8
—
—
—
2
3
10
—
—
—
—
Unit
nm
nm
—
cm² Typ.
—
—
—
pF
pF
—
g
—
Unit
µA/lm
mA/W
µA/lm-b
%
A/lm
A/W
—
V
nA
kcps
ns
ns
ns
%
%
%
—
mA
mA
%
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Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. _© 1998 Hamamatsu Photonics K.K.