R580 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – PHOTOMULTlPLlER TUBE

PHOTOMULTlPLlER TUBE
R580
For Scintillation Counting and High Energy Physics
38mm(1-1/2 lnch) Diameter, 10–stage, Bialkali Photocathode, Head–On Type
GENERAL
Spectral Response
Parameter
Wavelength of Maximum Response
Photocathode
Window Material
MateriaI
Minimum Effective Area
Dynode
Direct Interelectrode
Capacitances
Base
SuitabIe Socket
Structure
Number of Stages
Anode to Last Dynode
Anode to All Other Electrodes
Description/Value
300 to 650
420
Bialkali
34
Borosilicate glass
Linear focused
10
3
7
JEDEC No.B12–43
E678–12A(supplied)
Unit
nm
nm
mm dia.
pF
pF
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Unit
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
1750
350
Vdc
Vdc
Avarage Anode Current
0.1
mA
Ambient Temperature
-30 to +50
CHARACTERISTlCS (at 25 )
Parameter
Min.
Typ.
Luminous (2856K)
70
90
Cathode Sensitivity
Radiant at 420nm
Blue (CS 5 58 filter)
88
9
11
Quantum Efficiency at 420nm
27
Anode Sensitivity
Luminous (2856K)
10
100
Gain
1. 1 1 0 ⁶
Anode Dark Current (after 30min. storage in darkness)
3
Anode Pulse Rise Time
2.7
Time Response
Electron Transit Time
37
Transit Time Spread (FWHM)
4.5
Pulse Linearity ( 2% deviation)
150
NOTE: Anode characteristics are measured with the voItage distribution ratio shown below.
Max.
20
Unit
A/lm
mA/W
A/lm –b
%
A/lm
nA
ns
ns
ns
mA
VOLTAGE DlSTRlBUTlON RATlO AND SUPPLY VOLTAGE
Electrodes
Ratio
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
2
1
1
1
1
1
1
1
1
1
1
SuppIy Voltage : 1250Vdc, K : Cathode, Dy : Dynode, P : Anode
SPECIAL VOLTAGE DlSTRlBUTlON RATlO FOR PULSE LINEARITY MEASUREMENT
Electrodes
K
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
Ratio
2
1
1
1
1
1
1.2 1.5 2.2 3.6
3
Parallel Capacitors in F
0.01 0.02 0.04 0.06
SuppIy Voltage :1500Vdc
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Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. _© 1999 Hamamatsu Photonics K.K.