R4177-01_15 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – PHOTOMULTIPLIER TUBE

PHOTOMULTIPLIER TUBE
R4177-01
Ruggedized, High Temperature (175 °C) PMT for Oil Well Logging
13 mm (1/2 Inch) Diameter, 10-Stage, Head-on Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Window Material
Dynode
Structure
Number of Stages
Operating Ambient Temperature
Storage Temperature
Suitable Socket
Description
300 to 650
375
High Temp. Bialkali
10
Borosilicate glass
Linear focused
10
-30 to +175
-80 to +175
E678-13E (supplied)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
Value
1800
250
0.02
CHARACTERISTICS (at 25 °C)
Parameter
Min.
Cathode Sensitivity
Luminous (2856 K)
Blue Sensitivity Index (CS 5-58)
20
—
Anode Sensitivity
Luminous (2856 K)
10
Gain
—
Anode Dark Current (after 30 min storage in darkness)
—
Time Response
Anode Pulse Rise Time
Electron Transit Time
—
—
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
Typ.
40
6
20
5 × 10⁵
0.5 *
2
20
Max.
—
—
—
—
10
—
—
Unit
nm
nm
—
mm
—
—
—
°C
°C
—
Unit
V
V
mA
Unit
µA/lm
—
A/lm
—
nA
ns
ns
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
Ratio
1
1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1500 Vdc, K: Cathode, Dy: Dynode, P: Anode
ENVIRONMENTAL TESTING
Shock .................................................................. 5000 m/s² (500 G), 11 ± 1 ms, 3 impact shocks per direction (6 directions)
Vibration .............................................................. Sine 200 m/s² (20 G), 50 Hz to 2000 Hz, 1 oct per minute, 1 sweep per axis (3 axes)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.