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R375_15 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – 160 nm to 850 nm Response (Multialkali) 51 mm (2 Inch) Diameter, 10-stage, Head-on Type
PHOTOMULTIPLIER TUBE
R375
160 nm to 850 nm Response (Multialkali)
51 mm (2 Inch) Diameter, 10-stage, Head-on Type
GENERAL
Parameter
Spectral Response*
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
Dynode
Structure
Number of Stages
Operating Ambient Temperature
Storage Temperature
Base
Suitable Socket
* Operate in a nitrogen-purged environment for VUV detection.
Description / Value
Unit
160 to 850
nm
420
nm
Multialkali
—
46
mm
Synthetic Silica
—
Box and Grid
—
10
—
-30 to +50
°C
-80 to +50
°C
15-pin glass base
—
E678-15C (supplied)
—
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Unit
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
1500
V
250
V
Average Anode Current
0.1
mA
CHARACTERISTICS (at 25 °C)
Parameter
Min.
Luminous (2856 K)
80
Cathode Sensitivity
Radiant at 420 nm
—
Red/White Ratio (R-68)
—
Anode Sensitivity
Luminous (2856 K)
Radiant at 420 nm
20
—
Gain
—
Anode Dark Current (after 30 min. storage in darkness)
—
Time Response
Anode Pulse Rise Time
Electron Transit Time
—
—
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
Typ.
150
64
0.2
80
3.4 × 104
5.3 × 105
5
9.0
70
Max.
—
—
—
—
—
—
20
—
—
Unit
µA/lm
mA/W
—
A/lm
A/W
—
nA
ns
ns
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
K
G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
Ratio
1
1
1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1000 V dc, K: Cathode, Dy: Dynode, P: Anode
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.