R329-02_15 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – For Scintillation Counting, Fast Time Response 51 mm (2 Inch) Diameter, Bialkali Photocathode, 12-stage Head-on Type

PHOTOMULTIPLIER TUBE
R329-02
For Scintillation Counting, Fast Time Response
51 mm (2 Inch) Diameter, Bialkali Photocathode, 12-stage Head-on Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window
Material
Shape
Dynode
Structure
Number of Stages
Operating Ambient Temperature
Storage Temperature
Base
Suitable Socket
Description / Value
Unit
300 to 650
nm
420
nm
Bialkali
—
46
mm
Borosilicate glass
—
Plano-concave
—
Linear focused
—
12
—
-30 to +50
°C
-80 to +50
°C
21-pin glass base
—
E678-21C (supplied)
—
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Unit
Supply Voltage
Between Anode and Cathode
2700
V
Average Anode Current
0.2
mA
CHARACTERISTICS (at 25 °C)
Parameter
Luminous (2856 K)
Cathode Sensitivity
Blue Sensitivity Index (CS 5-58)
Radiant at 420 nm
Anode Sensitivity
Luminous (2856 K)
Radiant at 420 nm
Gain
Anode Dark Current (after 30 min storage in darkness)
Anode Pulse Rise Time
Time Response
Electron Transit Time
Transit Time Spread (T.T.S.)
Pulse Linearity
at 2 % Deviation
at 5 % Deviation
Min.
60
—
—
30
—
—
—
—
—
—
—
—
Typ.
90
10.5
85
100
9.4 × 10⁴
1.1 × 10⁶
6.0
2.6
48
1.1
100
200
Max.
—
—
—
—
—
—
40
—
—
—
—
—
Unit
µA/lm
—
mA/W
A/lm
A/W
—
nA
ns
ns
ns
mA
mA
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 P
Ratio
4
0
1 1.4 1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1500Vdc, K: Cathode, Dy: Dynode, P: Anode, G: Grid
* ^{The shield pin should be connected to Dy5.}
SPECIAL VOLTAGE DISTRIBUTION RATIO FOR PULSE LINEARITY MEASUREMENTS
Electrodes K G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 P
Ratio
4.3 0
1 1.6 1
1
1 1.2 1.5 2 2.4 3 3.9 3
Supply Voltage: 2000 Vdc, K: Cathode, Dy: Dynode, P: Anode, G:Grid
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.