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R329-02 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – PHOTOMULTIPLIER TUBE
PHOTOMULTIPLIER TUBE
R329-02
For Scintillation Counting, Fast Time Response
51 mm (2 Inch) Diameter, Bialkali Photocathode, 12-stage Head-On Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Window
Material
Shape
Dynode
Structure
Number of Stages
Base
Suitable Socket
Description/Value
300 to 650
420
Bialkali
46
Borosilicate glass
Plano-concave
Linear focused
12
21-pin glass base
E678-21A (supplied)
Unit
nm
nm
—
mm dia.
—
—
—
—
—
—
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Unit
Supply Voltage
Between Anode and Cathode
2700
Vdc
Average Anode Current
0.2
mA
Ambient Temperature
-80 to +50
°C
CHARACTERISTICS (at 25°C)
Parameter
Luminous (2856K)
Cathode Sensitivity
Blue (CS 5-58 filter)
Radiant at 420nm
Anode Sensitivity
Luminous (2856K)
Radiant at 420nm
Gain
Anode Dark Current (after 30min. storage in darkness)
Anode Pulse Rise Time
Time Response
Electron Transit Time
Transit Time Spread (T.T.S.)
Pulse Linearity
at 2% Deviation
at 5% Deviation
Min.
60
—
—
30
—
—
—
—
—
—
—
—
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
Typ.
90
10.5
85
100
9.4 × 104
1.1 × 106
6.0
2.6
48
1.1
100
200
Max.
—
—
—
—
—
—
40
—
—
—
—
—
Unit
µA/lm
µA/lm-b
mA/W
A/lm
A/W
—
nA
ns
ns
ns
mA
mA
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 P
Ratio
4
0
1 1.4 1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1500Vdc, K: Cathode, Dy: Dynode, P: Anode, G: Grid
* The shield pin should be connected to Dy5.
SPECIAL VOLTAGE DISTRIBUTION RATIO FOR PULSE LINEARITY MEASUREMENTS
Electrodes K G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12 P
Ratio
4.3 0
1 1.6 1
1
1 1.2 1.5 2 2.4 3 3.9 3
Supply Voltage: 2000Vdc, K: Cathode, Dy: Dynode, P: Anode, G:Grid
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATS U is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. © 1999 Hamamatsu Photonics K.K.