R2658_15 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – PHOTOMULTIPLIER TUBES

PHOTOMULTIPLIER TUBES
R2658
R2658P (for Photon Counting)
High QE in Near IR Region Due to InGaAs (Cs) Photocathode
For Spectrophotometers with 185 to 1010 nm Range,
Fluorescence and Laser Applications and Photon Counting (R2658P)
in the Near Infrared Region, etc.
FEATURES
GHigh QE in Near IR Region .......................... QE 0.13% at 1000 nm
GWide Wavelength Range ........................................ 185 to 1010 nm
GLow Dark Current .......................................... 1 nA at 1250 V (Typ.)
The R2658 and the R2658P are 28 mm (1-1/8 inch) diameter side-
on photomultiplier tubes using a newly developed InGaAs
semiconductor photocathode.
The InGaAs photocathode is sensitive from UV to near IR
radiations (as long as over 1010 nm) longer than wavelength limit
of GaAs photocathode, and yet offers low dark current. The dark
current is 2 orders lower than the commercial S-1 photocathode.
Therefore, they are well suited for low light detection in the near IR
region including fluorescence lifetime measurements. Time
response, gain, and dimensions are identical with the conventional
28 mm (1-1/8 inch) diameter side-on tubes with a GaAs
photocathode.
The R2658P is a photon counting version of the R2658 with low
dark counts.
SPECIFICATIONS
GENERAL
Parameter
Description / Value Unit
Spectral Response
185 to 1010
nm
Wavelength of Maximum Response
400
nm
MateriaI
Photocathode
Minimum Effective Area
InGaAs (Cs)
—
3 × 12
mm
Window Material
UV glass
—
Secondary Emitting Surface
Cu-BeO
—
Dynode
Structure
Circular-cage —
Number of Stages
9
—
Direct
Anode to Last Dynode
Approx. 4
pF
Interelectrode
Capacitances Anode to All Other Electrode
Approx. 6
pF
Base
11-pin base
—
JEDEC No. B11-88
Weight
Approx. 45
g
Suitable Socket (Option)
E678-11A
—
Suitable Socket Assembly (Option)
E717-63
—
Figure 1: Typical Spectral Response
TPMSB0150EB
100
CATHODE
RADIANT SENSITIVITY
10
QUANTUM
EFFICIENCY
1
0.1
0.01
100 200 300 400 500 600 700 800 900 1000 1100
WAVELENGTH (nm)
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2013 Hamamatsu Photonics K.K.