R2658 Datasheet, PDF (1/4 Pages) Hamamatsu Corporation – PHOTOMULTIPLIER TUBES

PHOTOMULTIPLIER TUBES
R2658
R2658P (For Photon Counting)
High QE in Near IR Region Due to InGaAs (Cs) Photocathode
For Spectrophotometers with 185 to 1010 nm range,
Fluorescence and Laser Applications and Photon Counting (R2658P)
in the Near Infrared Region, etc.
FEATURES
High QE in Near IR Region ............................... QE 0.13% at 1 µm
Wide Wavelength Range ....................................... 185 to 1010 nm
Low Dark Current .......................................... 1 nA at 1250 V (Typ.)
The R2658 and the R2658P are 28 mm (1-1/8 inch) diameter side-on
photomultiplier tubes using a newly developed InGaAs semiconductor
photocathode.
The InGaAs photocathode is sensitive from UV to near IR radiations
(as long as over 1010 nm) longer than wavelength limit of GaAs photo-
cathode, and yet offers low dark current. The dark current is 2 orders
lower than the commercial S-1 photocathode. Therefore, they are well
suited for low light detection in the near IR region including fluores-
cence lifetime measurements. Time response, gain, and dimensions
are identical with the conventional 28 mm (1-1/8 inch) diameter side-on
tubes with a GaAs photocathode.
The R2658P is a photon counting version of the R2658 with low dark
counts.
GENERAL
Parameter
Description/Value Unit
Spectral Response
185 to 1010 nm
Wavelength of Maximum Response
400
nm
Material
Photocathode
Minimum Effective Area
InGaAs (Cs) —
3 × 12
mm
Window Material
UV glass
—
Secondary Emitting Surface
Cu-BeO
—
Dynode
Structure
Circular-cage —
Number of Stages
9
—
Direct
Interelectrode
Anode to Last Dynode
Approx. 4
pF
Capacitances Anode to All Other Electrodes Approx. 6
pF
Base
11-pin base
—
JEDEC No. B11-88
Weight
Approx. 45
g
Suitable Socket (Option)
E678-11A
—
Suitable Socket Assembly (Option)
E717-63
—
Figure 1: Typical Spectral Response
TPMSB0150EA
100
CATHODE
RADIANT SENSITIVITY
10
QUANTUM
EFFICIENCY
1
0.1
0.01
100 200 300 400 500 600 700 800 900 1000 1100
WAVELENGTH (nm)
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Information furnished by HAMAMATS U is believed to be reliabIe. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. _© 2000 Hamamatsu Photonics K.K.