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R2083_15 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – PHOTOMULTIPLIER TUBES
PHOTOMULTIPLIER TUBES
R2083, R3377
For Scintillation Counting and High Energy Physics
51 mm (2 Inch) Diameter, Subnanosecond Time Response (Tr = 0.7 ns)
8-Stage, R2083: Borosilicate Window, R3377: Synthetic Silica Window,
Bialkali Photocathode
GENERAL
Parameter
Spectral Response
R2083
R3377
Wavelength of Maximum Response
Photocathode
MateriaI
Minimum Effective Area
Window Material
R2083
R3377
Dynode
Structure
Number of Stages
Operating Ambient Temperature
Storage Temperature
Base
Suitable Socket
Description / Value
Unit
300 to 650
nm
160 to 650
nm
420
nm
Bialkali
—
46
mm
Borosilicate glass
—
Synthetic silica glass
—
Linear focused type
—
8
—
-30 to +50
°C
-30 to +50
°C
19-pin glass base with SMA output connector
—
E678-19J (supplied)
—
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Unit
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
3500
V
1000
V
Average Anode Current
0.2
mA
CHARACTERISTICS (at 25 °C)
Parameter
Min.
Luminous (2856 K)
60
Cathode Sensitivity
Radiant at 420 nm
—
Blue Sensitivity Index (CS 5-58)
R2083
R3377
—
—
Anode Sensitivity
Luminous (2856 K)
50
Gain
—
Anode Dark Current (after 30 min storage in darkness)
—
Anode Pulse Rise Time
—
Time Response
Electron Transit Time
—
Transit Time Spread
—
Pulse Linearity at 2 % Deviation
—
Typ.
80
80
10.0
9.5
200
2.5 × 106
100
0.7
16
0.37
100
Max.
—
—
—
—
—
—
800
—
—
—
—
Unit
µA/lm
mA/W
—
—
A/lm
—
nA
ns
ns
ns
mA
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K G Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Acc Dy7 Dy8 P
Ratio
1.3 4.8 1.2 1.8 1
1
1
1 0.5 3 2.5
Supply Voltage: 3000 Vdc, K: Cathode, Dy: Dynode, P: Anode, G: Grid
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2013 Hamamatsu Photonics K.K.