R1288A_15 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – For High Temperature Scintillation Counting Ruggedized, Low Profile, 25 mm (1 Inch) Diameter High Temp. Bialkali Photocathode, 10-stage, Head-on Type

PHOTOMULTIPLIER TUBE
R1288A
For High Temperature Scintillation Counting,
Ruggedized, Low Profile, 25 mm (1 Inch) Diameter,
High Temp. Bialkali Photocathode, 10-stage, Head-on Type
GENERAL
Parameter
Spectral Response
Wavelength of Maximum Response
Photocathode
Material
Minimum Effective Area
Window Material
Dynode
Structure
Number of Stages
Operating Ambient Temperature
Storage Temperature
Base configuration
Suitable Socket
Description
300 to 650
375
High Temp. Bialkali
22
Borosilicate glass
Circular and Linear focused
10
-30 to +175
-80 to +175
Flying Lead Temporary Base
E678-12R (supplied)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage
Between Anode and Cathode
Between Anode and Last Dynode
Average Anode Current
Value
1800
250
0.02
CHARACTERISTICS (at 25 °C)
Parameter
Luminous (2856 K)
Min.
20
Cathode Sensitivity
Quantum Efficiency at 375 nm
—
Blue Sensitivity Index (CS 5-58)
4
Anode Sensitivity
Luminous (2856 K)
8
Gain
—
Anode Dark Current (after 30 min storage in darkness)
—
Time Response
Anode Pulse Rise Time
Electron Transit Time
—
—
NOTE: Anode characteristics are measured with the voltage distribution ratio shown below.
Typ.
40
16.9
6
15
3.8 × 10⁵
0.1
1.3
13
CHARACTERISTICS (at 175 °C) with Standard Voltage Divider
Parameter
Min.
Anode Dark Current (after 30 min storage in darkness)
—
NOTE: Anode characteristics are measured with a voltage distribution ratio shown below
Typ.
1000
Max.
—
—
—
—
—
10
—
—
Max.
—
STANDARD VOLTAGE DIVIDER AND SUPPLY VOLTAGE
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 P
Ratio
3
1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1500 V, K: Cathode, Dy: Dynode, P: Anode
ENVIRONMENTAL TESTING
Shock............10 000 m/s², 0.5 ms, 3 impact shocks per direction (6 directions)
Vibration........300 m/s², 50 Hz to 2000 Hz, 1 oct per minute, 3 sweeps per axis (3 axes)
Unit
nm
nm
—
mm
—
—
—
°C
°C
—
—
Unit
V
V
mA
Unit
µA/lm
%
—
A/lm
—
nA
ns
ns
Unit
nA
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.