R11715-01_15 Datasheet, PDF (1/2 Pages) Hamamatsu Corporation – 28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type Low Noise Bialkali Photocathode + UV Glass, With a Peltier Device Thermistor, and Insulation Cover Case Attached

PHOTOMULTIPLIER TUBE
R11715-01 (Cooled PMT)
28 mm (1-1/8 Inch) Diameter, 9-stage, Side-on Type
Low Noise Bialkali Photocathode + UV Glass, With a Peltier Device
Thermistor, and Insulation Cover Case Attached
SPECIFICATIONS
GENERAL
Parameter
Description / Value
Unit
Spectral Response
185 to 710
nm
Wavelength of Maximum Response
410
nm
Photocathode
MateriaI
Minimum Effective Area
Low noise bialkali
8 × 24
—
mm
Window Material
UV glass
—
Dynode
Structure
Number of Stages
Circular-cage
9
—
—
Base
11-pin base JEDEC No. B11-88 —
Weight
Approx. 68
g
Operating Ambient Temperature
-30 to +50
°C
Storage Temperature
-30 to +50
°C
SuitabIe Socket
E678-11A (Sold separately) —
SuitabIe Socket Assembly
E717-63 (Sold separately) —
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
Unit
Supply Between Anode and Cathode
1250
V
Voltage Between Anode and Last Dynode
250
V
Average Anode Current
0.1
mA
CHARACTERISTlCS (at Ambient Temperature 25 °C)
Parameter
Min. Typ. Max. Unit
Luminous (2856 K)
80
100
— µA/lm
Cathode Radiant at 410 nm
—
70
— mA/W
Sensitivity Quantum Efficiency at 410 nm —
21.1
—
%
Blue Sensitivity Index (CS 5-58) —
8
—
—
Anode
Luminous (2856 K)
1000 1200
— A/lm
Sensitivity Radiant at 410 nm
— 8 × 10⁵ — A/W
Gain
— 1.2 × 10⁷ —
—
Anode Dark Current
(After 30 min Storage in Darkness)
Anode Dark Counts at Plateau Voltage
—
0.2 /
0.02 ^A
0.5
nA
— 10 / 1 ^A 50
s^-1
Time
Anode Pulse Rise Time
—
2.2
—
ns
Response Electron Transit Time
—
22
—
ns
NOTE: AThe values are measured at ambient temperature 25 °C and a Peltier
supply current of 2.73 A, with a heatsink attached to the R11715-01 for
forced air cooling.
R11715-01 (R11715 with peltier device)
PELTIER DEVICE
Parameter
Value
Maximum Power Consumption 8.20 W
Maximum Supply Current
2.73 A
Maximum Applied Voltage
3.00 V
Maximum Operating Temperature
50 °C
Leak Current Between
Cathode and Peltier GND
1 nA or less ¹
NOTE: 1Insulation resistance at 25 °C: 1.0 × 10¹⁴ Ω
PELTIER COOLING PERFORMANCE
Parameter
Value
Cathode Cooling Temperature (∆T) -15 °C ²
Time Required to Reach
Target Cooling Temperature
3 min ³
NOTE: 2, 3At a supply current of 2.73 A and with a
heatsink attached to the R11715-01 for forced
air cooling.
Cooling temperature (∆T) is the difference be-
tween the ambient temperature and the cath-
ode temperature when fully cooled.
When attaching a heatsink to the R11715-01,
apply thermal grease to the surface of the
Peltier device so that the heat on the hot side
dissipates efficiently through the heatsink dur-
ing operation.
Temperature should be controlled by current
during operation of the Peltier device.
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes K Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 P
Ratio
1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode
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Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2014 Hamamatsu Photonics K.K.